| Bruker X-ray solutions for GaN power device metrology |
John Mallows |
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| Characterization of Thin Films and Critical Dimensions in Silicon Carbide and Gallium Nitride Process |
Aseem Srivastava |
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| Complex device design using predictive modelling |
Ahmed Nejim |
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| High throughput Epitaxy Solution for Compound Semiconductors |
Nicolas Muesgens |
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| Mass volume manufacturing of 8-inch GaN-on-Si discrete and Integrated power devices: bringing efficiency and operating frequency to the next level |
Denis Marcon |
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| New workflows for resolving compound semiconductor defectivity issues using destructive and non-destructive electron microscopy techniques |
Micah Ledoux |
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| Plasma-Polish Dry Etch: Smoothing solution to prepare Epi-Ready SiC for Power Applications |
Amandev Singh |
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| Powerful metrology use cases - Addressing compound material industry needs |
Gábor Szendrei |
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| Scaling Manufacture of Compound Semiconductor Devices |
Brian Stickney |
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| Silicon carbide enabling true mass electrification |
Manuel Gärtner |
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| Speeding up XRT Defect Recognition for SiC |
Christian Kranert |
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| Streamlining SiC Boule Fabrication – Hardinge’s BoulePro 200 Invents Low-Cost Boule Shaping |
Jeff Gum |
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| The BelGaN Innovation Factory & GaN Valley: Building a Wide Bandgap Semiconductor Innovation Ecosystem in Europe |
Marnix Tack |
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| Tight process control for GaN-based power devices: The Potential of connected metrology in semiconductor device production |
Kolja Haberland |
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| Total solutions for Silicon Carbide from wafer making to device making |
Gerald Klug |
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| Will wide bandgap power electronics market hit $10 billion and beyond? |
Callum Middleton |
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