Aly Mashaly - ROHM Semiconductor

Aly Mashaly is a holder of 11 Patents in the field of Power electronics and Mechatronics and Author of more than 40 technical articles and papers
Between 2000-2003, Aly Mashaly worked as consultant in the field of Power electronics for different industrial companies and factories in Egypt. Between 2004-2006, Mashaly studied a Master of Science of electrical engineering at the University of Hanover and from 2006 - 2007, he became a member of academic staff at the University of Hanover Institute for Drive Systems and Power Electronics. From 2007-2011 Mashaly worked as an R&D Engineer in the Power electronics field of avionics at Liebherr Elektronik GmbH in Germany. Mashaly joined as Manager of eMobility, at KEB GmbH in 2011. For the last 3 years, Mashaly has been working as Senior Manager, Power Systems for ROHM Semiconductor.

Presentation
Giving Formula E racing cars an edge with SiC

In automotive applications, requirements like space, weight and high efficiency play an increasing role. This leads to more demanding design requirements on the system and component level and ultimately affects the overall consistence of power devices, passive components, cooling technologies and PCBs. In consequence, Silicon Carbide (SiC) has become of higher interest in recent years. This presentation will focus on: SiC Technology and trends; the Benefit of SiC for the power train inverter, with a case study from Formula e racing car; and the benefit of utilizing SiC in personal vehicles (serial cars).

Hong Lin - Yole Développement

Dr. Hong Lin works at Yole Développement, the "More than Moore" market research and strategy consulting company, as a technology and market analyst since 2013. She is specialized in compound semiconductors and provides technical and economic analysis. Before joining Yole Développement, she worked as R&D engineer at Newstep Technologies. She was in charge of the development of cold cathodes by PECVD for visible and UV lamp applications based on nanotechnologies. She holds a Ph.D in Physics and Chemistry of materials.

Presentation
SiC and GaN adoption by EV/HEV market

EV/HEV market is booming and becoming the most important driving factor of power electronics market. The rapid growth has bring enormous market opportunity for Compound semiconductor, in particular Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices, which have demonstrated large potential. Tesla’s adoption of SiC MOSFET in its vehicles excited the SiC community. On the other hand, GaN power devices manufacturers are preparing their entry into EV/HEV markets as well. In this presentation, we will give Yole’s analysis of SiC and GaN adoption by EV/HEV market. 

Jens Voigt - AIXTRON

Dr. Jens Voigt is Director Product Management in AIXTRON SE. He is responsible for the product strategy of AIXTRON’s compound semiconductor deposition equipment portfolio. He received his PhD in Physics from the University of Kassel, Germany, in the field of Micro Electro-Mechanical Systems. He joined AIXTRON in year 2001 as a Process Scientist, focusing on GaN MOCVD for LED applications. He has held different appointments in sales and service functions and is now in charge of Marketing, Sales and After Sales Strategy.

Presentation
Enabling Global Mega Trends with Compound Semiconductors

Compound Semiconductor materials are accelerating their penetration in both industrial and consumer products at a rapid pace. While the first area is mainly driven by performance enhancements or savings at operational levels, increased adoption into consumer products can only be enabled if both the provision of additional, innovative benefits for the end customers and cost control at parity to existing solutions are met. This holds true for laser devices, for which performance, yield and cost control, enabled by planetary reactor technology, have achieved penetration of VCSELs (Vertical Cavity Surface Emitting Lasers) and EELs (Edge Emitting Lasers) to broader consumer markets. Our presentation will review the business opportunity for compound semiconductor advanced applications ranging from micro LEDs to 3D sensors, as well as Power and RF devices. We will present how MOCVD equipment is evolving towards new productivity standards to enable highest control of material performance while delivering the cost roadmap required to support penetration to more and more consumer products and related infrastructures.

Markus Behet - EpiGaN

In the past 20 years Markus has held various executive marketing and business development roles in compound semiconductor divisions at Dow Corning, Triquint Semiconductor, Infineon Technologies, Siemens and imec. In 2015 Markus joined EpiGaN as Chief Marketing Officer and leads the company’s global commercial and marketing activities. Markus holds a PhD in semiconductor physics and electrical engineering from Aachen Technical University, Germany.

Presentation
GaN on Si – A Key enabling technology for 5G

5G technology will bring new challenges for both carrier providers and handset manufacturers such as lower latency, high data rates and capacity as well as a significantly increased complexity in handset RF frontends. GaN technology and especially if integrated on low-cost and large-diameter Si substrates has the capability to address these challenges for 5G sub 6 GHz and mmW bands. EpiGaN has developed optimized RF GaN epiwafer solutions up to 200mm addressing the needs of these demanding 5G device applications. Learn about our latest GaN epiwafer product developments with lowest RF losses and dispersion fueling next generation 5G technology.

Mukundkrishna Raghunathan - KLA Corporation

Mukund Raghunathan manages the Candela wafer inspection product lines in the Instruments Group at KLA Corporation playing a vital role in driving engineering programs to provide leading edge solutions to our customers. Prior to this role, he was in the application group supporting KLA’s E-Beam Review and Candela Wafer Inspection tools and has been working with KLA for 14 years. He holds a ME in Microelectronics Engineering from RMIT University in Melbourne, Australia.

Presentation
Advanced inspection and metrology solutions for accelerated Compound Semiconductor yield improvement

With expanding applications and growing performance requirements from Compound Semiconductor devices, leading device manufacturers are looking for new ways to characterize yield-limiting defects that will help them achieve faster development and ramp times, higher product  yields and lower device costs. This talk aims to provide a summary of how full-surface, high sensitivity defect inspection enables fast and accurate feedback for process control to improve substrate quality as well as optimize the epitaxial growth yields on Compound Semiconductor wafers for related applications. 

Gerald Klug - DISCO HI-TEC EUROPE

Gerald Klug studied business engineering at the University of Siegen and graduated in 1998 as Dipl.-Wirt.-Ing., completing his thesis at BMW in Munich. He started his carrier as a designer of coil processing lines for nearly 3 years at a German machine manufacturing company, Heinrich Georg GmbH. At the end of 2000, he joined DISCO as a Sales Engineer for the area of Scandinavia. Meanwhile he has been almost 18 years at DISCO, currently Sales Manager in charge of major customers in Europe. 

Presentation
Laser-lift-off (LLO) and CONDOx for wafer ultra-thinning process for 3D stacked devices, TSV, eWLB and WLCSP wafers

Wafer ultra-thinning is essential for advanced 3D packaging, at the same time challenging. The final thickness of the substrate is very small and the bumps may be higher than the substrate thickness for 2,5D interconnects. At DISCO, we deal with the extreme thinness of wafers and have developed solutions to make thinning processes as efficient as possible, to protect the product and to allow for easier handling of TSV, eWLB and WLCSP wafers.

Extreme thin grinding is a key component of 3D stacked devices interconnected by TSVs and advanced semiconductor scaling. For some products, the final thickness of the silicon is up to 10 μm or even smaller. Yet, at a certain thickness, wafers lose their rigidity and tend to warp or break easily. Temporary bonding is a countermeasure where a glass carrier is bonded temporarily to the wafer. However, the main issue is to release the wafer from the glass carrier after thinning down the silicon without wafer breakage or high tension.

A laser-supported release (Laser-Lift-Off) has been developed by DISCO which has several advantages towards other release techniques like chemical or thermal release. In the presentation, we will discuss the latest updates of Laser Lift-Off in wafer-on-wafer (WOW) technology and which benefits come with our optimized technologies.

Further, we will introduce our latest solutions for thinning eWLB or WLCSP wafers with high bumps. We will give examples how DISCO’s CONDOx technology allows for thinning wafers with final Si thickness of 25 μm and 200 μm bump height without residues, edge chipping and a further improved total thickness variation (TTV).

Philippe Bezard - Plasma-Therm

Dr. Bezard has a Degree in Nuclear Engineering and PhD in Plasma physics and dry-etching working in the LTM – CNRS and additional six years of experience in dry etching for Advanced Nodes in CMOS Front-End and III-V etching for power electronic with industrials partners such as AMAT and ST Microelectronics. Main author of four pending patents and co-author of more than fifteen papers about Directed Self-Assembly, Plasma diagnostics, etching mechanisms and defectivity of Gallium Nitride.  Presently a lead process engineer for plasma dicing at Plasma-Therm France.

Presentation
Extending performance in advanced packaging with low temperature, low damage plasma technologies

“More than Moore” will utilize both innovative technologies and apply established technologies in new ways. Thin wafers and multi-chip packaging trends with the requisite precision, performance, reliability, die sizes/shapes, and costs are driving renewed interest in package integration. Front-end and back-end manufacturing is incorporating plasma etching and deposition processes with new materials, new layer structures, and substrates with a mindful eye on temperature and plasma damage. Creative plasma delivery and chemistries provide an opportunity ensure thermal and damage budgets are met.   We will discuss relatively low temperature, low damage dry etch and deposition solutions in a range of applications that include TSVs, wafer cleaning, surface activation/modification, conformal liners, and plasma dicing.   

Remi Comyn - Knowmade

Dr. Rémi Comyn works for Knowmade as Technology and Patent Analyst in the field of Compound Semiconductors and Electronics. He holds a PhD in Physics from the University of Nice Sophia-Antipolis (France) in partnership with CRHEA-CNRS (Sophia-Antipolis, France) and the University of Sherbrooke (Québec, Canada). Rémi previously worked in compound semiconductors research laboratory as Research Engineer.

Presentation
Innovators in Power SiC

Patent literature is a mine of information to apprehend the competitive landscape and technology developments. With a focus on SiC MOSFETs, we will reveal the current innovators and their technical choices, in particular for trench gate SiC MOSFETs. We will discuss the most relevant patents which solve hot technical challenges.

Andy Sellars - CSA Catapult

Andy was appointed Chief Business Development Officer of the Compound Semiconductor Applications Catapult in February 2017, and was promoted to Strategy Director in October 2018. Andy developed the Catapult’s business plan and strategy for HM Treasury following a 2-year consultation with industry, government and academia. Andy joined the Catapult from Innovate UK, where he delivered £15m of strategic investments in electronics, smart materials and compound semiconductors. Andy’s early career was spent leading R&D teams with Rolls Royce, Spirent PLC and Abbott Diagnostics. He also set up an events management company, securing keynote speakers from the House of Lords, and was prime consultant on film and TV lighting for James Bond and Sky News. Andy holds an Executive MBA from Glasgow University and a Doctorate from Strathclyde University.  Andy recently represented the Catapult during round table discussions with the Prime Minister, and joined the Secretary of State during the GREAT Festival of Innovation in Hong Kong.  

Presentation
Accelerating the commercial application of compound semiconductors

The Compound Semiconductor Applications Catapult is an open-access research facility working collaboratively with business to develop next generation products using compound semiconductors. The Catapult’s aim is to accelerate the use of compound semiconductors by helping companies overcome the technical and business risks associated with adopting new technologies. Supported by the UKRI, the UK’s innovation agency, the Catapult will open state-of the-art facilities in 2019. These facilities include a design studio, a power electronics lab, a RF/microwave lab and a photonics lab, which are supported by an advanced packaging lab.

This paper describes the Catapult’s strategy to accelerate the application of new compound semiconductor devices through the development of evaluation modules (EVMs). Evaluation modules are a well-established means of evaluating the performance of new semiconductor devices, allowing users to develop new applications while working with a familiar interface. EVMs form a central strand of the Catapult’s strategy to accelerate the adoption of new compound semiconductor devices into new and emerging applications. This paper covers the development of the first EVMs, and their applications in power electronics, RF and photonics.

Bernardette Kunert - imec

Dr. Bernardette Kunert is principal member of technical staff at imec, Belgium. She is responsible for III/V growth on Si substrates and develops devices in the field of Silicon Photonics, RF-applications, imagers etc. Prior to that she was working as a project manager for the R&D company NAsPIII/V GmbH, Germany. Dr. Bernardette Kunert received a Dipl.-Phys. degree in 2001 and a PhD degree in 2005 from the Philipps University Marburg, Germany.

Presentation
III/V Nano-ridge Engineering for novel Device Integration on Si

Meeting the high requirements of cost-efficiency and scalability in III/V integration on Si, the monolithic hetero-epitaxial growth is the most promising approach although facing the challenges of misfit defect formation due to the large lattice mismatch. Selective area growth of III/Vs in narrow trenches is a well-known method to achieve a high crystal quality. The pronounced growth out of trenches in line with an engineered nano-ridge shape is a unique integration approach introduced by imec. It leads to an enlarged III/V nano-ridge volume for novel device architectures. In this presentation I will explain this unique III/V nano-ridge engineering approach and evaluate the challenges and opportunities in epitaxial growth and new device design.

Gabriele Formicone - Integra

Dr. Gabriele Formicone received the Laurea in Physics from the University of Rome “La Sapienza” (Italy), M.S. and Ph.D. in Electrical Engineering from Arizona State University in Tempe, AZ, USA. He has 20+ years of industry experience in the design and characterization of RF/Microwave power transistors. His expertise covers Silicon Bipolar, Vertical and Lateral DMOS transistors and GaN/AlGaN HEMT RF power technologies, spanning from TCAD simulations for transistor design and process optimization, to transistor layout and RF power amplifier design and characterization. Dr. Formicone is IEEE Senior Member and (part-time) faculty associate at Arizona State University in the Department of Electrical Engineering.

Presentation
Increasing the Power of Solid-State RF Amplifiers

The latest advances in GaN on SiC technology to increase the power of RF amplifiers for radars and other applications are reported. State-of-the-art discrete and pallet amplifier technology based on 50 VDC AlGaN/GaN HEMT on SiC is presented. Additionally, the latest efforts to increase power by exploring innovative transistor designs suitable for operation at 100-150 VDC are presented. Unlike 600 V GaN devices designed for low frequency DC-DC converters, the presentation addresses design goals for 600 V RF GaN transistor amplifiers capable of operating at 100-150 VDC in radar transmitters and other RF systems from UHF to L and S-band, and to C and X-band through additional innovations.

Marco Malinverni - Exalos

Dr. Marco Malinverni received his MSci degree in Physics from Imperial College London and Ph.D in Physics from Ecole Polytechnique Fédrale de Lausanne (EPFL). His main area of expertise is the growth and doping of III-Nitride compounds by MBE and MOCVD. He has 8 years of experience in the growth and design of edge-emitting AlInGaN-based optoelectronic devices such as LDs and SLEDs in the UV to green spectral region (400 – 520 nm). He also worked on the demonstration of AlGaN-based HEMT devices grown on single-crystal diamond substrates, GaN tunnel homojunctions, and regrowth of ohmic contacts for AlInN/GaN HEMTs on silicon substrates working in the W-band (94 GHz). 

Presentation
Superior superluminescent LEDs

Visible Superluminescent LEDs with red, green and blue (RGB) emission wavelengths are interesting light sources for display applications and architectures based on scanning MEMS mirrors, LCOS devices or holographic spatial modulators. EXALOS has developed efficient SLED devices at those primary colours over the past years. Here, we report on the improvement of the luminous and electro-optical efficiency of GaN-based SLEDs emitting in the green spectral range (λ > 500 nm). In addition, we present the results of blue and red SLEDs and discuss the challenges that still need to be tackled.

Mikko Soderlund - Beneq

Dr. Mikko Söderlund is Head of Industrial Solutions at Beneq, a leading supplier of ALD thin-film equipment and deposition services. He has Masters in Applied Electronics (1998), and PhD in Micro-and Nanoscience from Helsinki University of Technology (2009). Dr. Söderlund has more than 15 years’ experience in commercialization of innovative deposition technologies for Optical communications, Solid-state lighting, display, photovoltaics, and semiconductor markets. 

Presentation
ALD for Compound Semi Power and RF industrial applications

Largely driven by wireless infrastructure and defense markets GaN RF markets are experiencing a steady growth. Similarly challenges and solutions apply to overall GaN Power and GaAs RF devices. Critical to the performance of these devices are advanced thin-film deposition methods to obtain best electrical performance and guarantee reliable operation in demanding hot & humid conditions. High quality, dense and conformal layers deposited by ALD are addressing these challenges. This paper describes two leading ALD applications for GaN RF, namely gate dielectric for GaN HEMT device, and wafer-level thin-film encapsulation. High-volume manufacturing tool for these applications is also presented. 

Roger Hall - Qorvo

Roger Hall is the General Manager of High Performance Solutions at Qorvo, Inc., and leads the overall business as well as program management and applications engineering organizations for the Defense and Aerospace and Wireless Infrastructure markets. Prior to joining Qorvo (formerly TriQuint Semiconductor), Roger Hall held senior positions at Raytheon, Honeywell International/Allied Signal. 

Presentation
Pushing Performance in RF for 5G Networks

We are at the intersection of GaN and mmWave with AESA radar, MIMO and now, 5G, which are all driving to higher volume production. Interestingly, the GaN technology that matured under an industry-government partnership model is now a market shaper for commercial 5G networks. 5G is all about increased capacity, lower latency and increased robustness, which is supported by higher bandwidth and higher frequencies, making it a natural fit for leveraging the capabilities of GaN-on-SiC and mmWave technologies. 5G is ramping, but there are still unknowns and the right technology needs to be deployed for the right customer needs. Size, efficiency and power will drive the solution. The greater the efficiency, the higher the transmitted power or the lower the operational costs that will make 5G networks a reality.

Eric Higham - Strategy Analytics

As Director for the GaAs & Compound Semiconductor Technologies Service, Eric Higham provides analysis of the dynamics and trends for processes, technologies and components in wired and wireless communications markets. His areas of research include 3G and emerging 4G wireless networks, fiber optic networks, CATV, millimeter wave communications, broadband, military radar, EW and communications applications. Prior to joining Strategy Analytics, Eric worked in a variety of engineering, business development and marketing roles for Raytheon, Micro-Dynamics and M/A-COM. In these positions, he participated in the emergence and growth of the commercial wireless industry. Eric was most recently President and founder of Spectrum Business Development, where he developed market and product research for a variety of market applications. After over three decades in the semiconductor field, he brings a deep understanding of the technical and market trends in the GaAs and compound semiconductor sector. Eric holds an MSEE degree from Northeastern University in Boston, MA and a BSEE degree from Cornell University in Ithaca, NY.

Presentation
More data: More wireless or more fibre

Data traffic continues to increase at breakneck speed and emerging 5G applications are likely to quicken this pace. The challenge for service providers and network operators is the most cost effective way to move this data from point of origin to the end user without creating network bottlenecks that put the brakes on growth. This presentation will address some wireless and fiber network architectures that are evolving to support the data traffic explosion, looking at their advantages and disadvantages. We will also discuss the relative merits of different compound semiconductor technologies that will enable these architectures.

David Danzilio - WIN Semiconductors

Mr. Danzilio is Sr. Vice President at WIN Semiconductor Corp, focusing on advanced GaAs technologies, future markets and applications. David has over 30 years experience in the compound semiconductor industry, serving in numerous senior technical and executive management roles. Prior to joining WIN, Mr. Danzilio worked in several Engineering and Fab Management positions at M/A-COM and Raytheon, and as Vice President and General Manager at Emcore Corporation. David received a B.Sc. from the University of Lowell and holds several patents in the areas of GaAs technology and manufacturing methods.

Presentation
GaN-on-SiC Technologies for 5G Radio Access

Initial build-out of the 5G radio access network has commenced with sub-6GHz and mmWave infrastructure leveraging beamforming and MIMO architectures. These active antenna systems employ multiple RF chains, and a 5G modulation scheme requiring transmit power amplifiers operate at 10dB peak to average power ratio. This condition places a premium on Tx PA efficiency in back off, and the choice of semiconductor technology has a direct impact on access point coverage and operating costs. Gallium Nitride has achieved impressive levels of power performance, and is viewed as a viable PA technology for high EIRP scenarios. To satisfy the cost and performance objectives in this highly competitive market, WIN Semiconductors has commercialized GaN-on-SiC technologies to address both the sub-6GHz and mmWave bands. This presentation will discuss WIN’s view of the key GaN HEMT process attributes and performance targets required for 5G active antenna systems. 

Edward Wasige - EU Project/IBROW Project

Edward Wasige is a Professor and leads the High Frequency Electronics Group at the School of Engineering, University of Glasgow. He was a UNESCO Postdoctoral Fellow at The Technion (Israel) and prior to that a Lecturer at Moi University (Kenya). His research interests are in compound semiconductor technologies and applications, with focus on resonant tunnelling diodes and gallium nitride high electron mobility transistors. He leads or is a partner on a number of projects on these topics including iBROW, TeraApps, TERAPOD, DLINK, etc. He will be the Technical Programme Committee Chair for the European Microwave Integrated Circuits (EuMIC), European Microwave Week, to be held in London in 2021.

Presentation
Mm-wave/THz Multi-Gigabit Wireless Links – the iBROW Project

This talk will report on the iBROW (Innovative ultra-BROadband ubiquitous Wireless communications through terahertz transceivers) project, a European Commission (EC) funded Horizon 2020 project to develop a novel, energy-efficient and compact ultra-broadband short-range wireless communication transceiver technology, seamlessly interfaced with optical fibre networks and capable of addressing envisaged future network needs. On iBROW, resonant tunnelling diode (RTD) oscillators in chip form at both W-band and J-band with around 1 mW output power were demonstrated. These have been used in laboratory wireless experiments and have supported data rates of over 10 Gb/s over several metres with correctable bit-error-rate (BER) using simple amplitude shift keying (ASK). RTDs operate at room temperature, are compact, low power and can also be designed as photodetectors (PD). On iBROW, RTD-PDs have enabled microwave-photonic interfaces of up to 100 Mbaud optical data transmission using QPSK.

Gong Xiao - National University of Singapore/MIT Alliance

Dr. Gong Xiao is an Assistant Professor in the ECE Department of the National University of Singapore. His research aims to achieve large-scale heterogeneous integration of various circuit components such as logic, memory, RF, sensors, and power sources on Si substrates with innovations cutting across materials, device, circuits, and systems to enable the advancement of more-than-Moore applications, including 5G, Internet of Things, artificial intelligence, and wearable and flexible technology. He has more than 140 publications, including 10 in IEDM and 12 in VLSI Symposium. He has been in the technical committee of ECS, MRS, EDTM, ICMAT, ICICDT, and etc. He has given more than 15 invited talks in international conferences. 

Presentation
Targeting mm-wave communications with wafer-level integration of InGaAs HEMTs and silicon CMOS

Future millimetre-wave communication applications, such as 5G mobile and wireless, require circuits with superior performance, reduced interconnect power consumption, lower cost, and a smaller chip footprint. A promising technology enabler is the monolithic or heterogeneous integration of InGaAs HEMTs and Si CMOS to realize hybrid circuits that exploit the benefits of both III-V and Si platforms. In this talk, I will discuss our recent progress on the growth of various III-V layers with high quality and uniformity on large-scale Si substrate, fabrication of high performance InGaAs HEMTs with Si-CMOS compatible front-end process, and the realization of heterogeneous integration of InGaAs HEMTs with Si CMOS on the 200 mm Si substrate. 

Valery Tolstikhin - Intengent

Valery Tolstikhin received his PhD and DSc degrees in physics in 1980 and 1993, respectively, in Moscow, Russia. While working as research scientist in Russia, Sweden, and The Netherlands, he contributed to studies of the carrier transport and interaction with light in semiconductor microstructures.

Moving to Ottawa, Canada in 1997, Dr. Tolstikhin got involved in photonics research, development, and commercialization. He worked as research engineer for Institute for Microstructural Sciences, Optiwave Corporation, and Nortel Networks. In 2000 he joined MetroPhotonics as Director of Design, where he led the company’s InP PIC program.

In 2005 Dr. Tolstikhin founded OneChip Photonics, where he served as CTO and was instrumental to development of the company’s flagship PIC technology. It fulfilled his vision for a fabless model for PICs in InP, which he has been promoting ever since. In 2013 Dr. Tolstikhin co-founded another fabless InP PIC developer, ArtIC Photonics, where he served as President and CEO, leading the start-up through strategic investment and company build-up. In 2015 he co-founded ElectroPhotonic-IC (ELPHiC) and served as CTO of the company targeting extension of the fabless model in InP to electro-photonic integrated circuits (EPICs). In 2016 Dr. Tolstikhin founded Intengent, a III-V photonics consultancy, custom design, and fabless development firm, which he is currently with in a capacity of President and CEO.

Presentation
Fabless PICs in InP: Why, What, and How?

As PICs in InP are gaining momentum, their areas of application multiply and end users move up in a food chain. PICs are becoming customized, while their development goes beyond the means of the users. Fabless model is emerging as a solution, but its advancement depends on whether it meets the needs for customization and scalability. The regrowth-free taper-assisted vertical integration (TAVI) is a versatile technology that allows to decouple epitaxial growth and wafer fabrication, such that continuous development into production of fully custom InP PICs is achievable by outsourcing both to industrial-grade foundries. Referring to the TAVI technology, the talk will review the status and prospects of the fabless PICs in InP.

Torsten Stoll - Nanometrics

Torsten Stoll the head of product management and marketing at Nanometrics’ Materials Characterization business unit and has been working with Nanometrics for 14 years. He holds an MSc in electrical engineering and a BSc in business administration and an overall 20 years of experience in the semi-conductor industry.

Presentation
Process control solutions for maximum yield in HVM for SiC and GaN power devices

The power device market is seeking a significant shift from classic silicon into wide bandgap materials. Main candidates for existing and upcoming mass market products are SiC and GaN. While these materials have been used for years in niche applications and developments, the high-volume manufacturing of such devices is still in an early stage. Therefore, process control solutions to provide the base data to establish a sophisticated statistical process control are in high demand. Nanometrics’ materials characterization business unit is a specialist in epitaxial layer growth since more than 40 years. In this talk we want to introduce metrology solutions addressing the needs of data precision, high speed wafer monitoring and factory automation to make their users competitive, successful and improve the yield of their products. 

Joachim Burghartz - IMS Chips

Joachim N. Burghartz received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and as the Scientific Director of the Delft research institute DIMES. Since fall 2005 he is heading the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition he is affiliated with the University of Stuttgart as a full professor.

Presentation
Enabling GaN/Si in an Industry 4.0 environment

Enabling an open value chain for GaN/Si based products requires a tight cooperation and synchronization along all the chain members, starting from epitaxy, through design, fabrication and testing, and up to device packaging and end user customization. Central to this open value chain is the feedback and information flow between the chain members. IMS Chips has partnered recently with leading GaN experts in an Industry 4.0 driven project. In this presentation the implementation of the open value chain and the Industry 4.0 concepts are shown, with focus on the service building blocks provided by IMS Chips.

Thomas Uhrmann - EV Group

Dr. Thomas Uhrmann is director of business development at EV Group (EVG) where he is responsible for overseeing all aspects of EVG’s worldwide business development. Specifically, he is focused on 3D integration, MEMS, LEDs and a number of emerging markets.   Prior to this role, Uhrmann was business development manager for 3D and Advanced Packaging as well as Compound Semiconductors and Si-based Power Devices at EV Group. He holds an engineering degree in mechatronics from the University of Applied Sciences in Regensburg and a PhD in semiconductor physics from Vienna University of Technology.  

Presentation
Direct wafer bonding for GaN devices

GaN based devices are emerging rapidly due to the advantageous material properties of very high breakdown voltages, high electron mobility and saturation velocity of GaN. This makes GaN ideally suited for high power electronics, RF transistors and optoelectronic devices. However, GaN typically has to be combined with other materials to achieve high performance on an economically viable level. Direct wafer bonding is a versatile technique to join two similar or dissimilar materials without restriction by crystallographic structure or orientation. It minimizes also the influence of lattice and thermal mismatch. As a result this manufacturing technology enables new integration schemes for combining GaN with various substrate materials. It offers a high flexibility by imposing strict quality requirements without impacting the crystal structure.

Shivani Iyer - Nanotronics

Shivani Iyer is a Solutions Architect at Nanotronics, focusing on the extensive applications of the nSpec® from semiconductors to genomics and beyond. Ms. Iyer earned her Bachelor's degree in Electrical Engineering from the University of Illinois at Urbana-Champaign. She went on to earn her Master's degree in Electrical Engineering from New York University. Ms. Iyer has worked in various industries including chemical manufacturing and large-scale electronics production. 

Presentation
Inspection Convergence: Photoluminescence Imaging and AI

The last several years have seen the rapid adoption of new technologies that converge super-resolution optical microscopy and AI analysis.  Combined with AI, Photoluminescence Imaging enables quantification and categorization of defects that conventional Brightfield microscopy overlooks. Photoluminescence enables the characterization of stacks and folds in SiC that cannot be seen by other methods as quickly. Using diffused light at the wavelength of the material bandgap, it not only provides a precise measurement, but one that scales faster than any laser-based method. PL imaging provides a way to test functionality on the same wafer or product, and potentially at the same time as routine classification, giving a robust single station for solving production problems and leading to faster design iteration. 

Ke Xu - Nanowin

Dr. Ke Xu, president of Nanowin, has devoted his work to III-nitrides growth for 20 years, including MOCVD, MBE and HVPE. He first revealed the unique effects of the film polarity on InN growth, has published more than 80 peer reviewed papers and pended 50 patents, and delivered 20 invited talks in nitrides.

Presentation
Bulk GaN substrate growth by HVPE technology for GaN-on-GaN devices

GaN substrate with size up to 6 inch was successfully grown by HVPE. However, the challenges in fabricating high-quality and low-cost bulk GaN substrate still exist, such as dislocation density reduction, background carrier concentration control, n-type doping, semi-insulating substrate, bowing control, and surface preparation, etc. In this work, the recent progress in bulk GaN substrate growth by HVPE are reported, including doping with Si, Ge and Fe. The bulk GaN by HVPE has dislocation density in 104~105cm-2 order, and background electron concentration in the order of 1015cm-3. We also summarized the latest progress in GaN on GaN devices, including LED, laser diode, and power electronic devices.

Rob Rhoades - Revasum

Rob Rhoades is responsible for overseeing all process development and applications support for Revasum’s CMP and grinding products. Mr. Rhoades brings over 23 years of experience in developing leading CMP process technology. His expertise includes process engineering, CMP integration, and global applications support for everything from R&D prototypes through volume production on virtually any material. Rob began his career in semiconductors at Motorola in plasma CVD and quickly transitioned to take over responsibility for ramping CMP into production for oxide, tungsten, and STI CMP. Recently, Rob held a number of executive positions including Director of Engineering at Rohm & Haas and CTO at Entrepix, Inc.

Presentation
SiC Wafer Processing

Richard Eden - IHS Markit

Richard Eden is a principal analyst for power semiconductors at IHS Markit. For the last seven years, Richard has been responsible for IHS reports on the Si, SiC and GaN discrete power semiconductor and power module markets. He has written, and been quoted in, several articles on these topics in the trade press.

Richard has over 30 years of electronics industry experience including design at Plessey Microwave, sales and business development for ROHM Semiconductor, and marketing management at distributor RS Components. He is based in the IHS Global office in Wellingborough, UK, and may be contacted at [email protected] 

Presentation
Is the infrastructure in place to ramp SiC and GaN production?

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present the likely key applications, pricing trends, the supplier landscape and up-to-date ten-year forecasts by application for both technologies. It will identify which technologies can compete with silicon in terms of device type and likely adoption by end applications. The SiC & GaN wafer substrate supply chain will also be discussed. Finally, I will try to answer the question: Is the infrastructure in place to ramp up production of SiC and GaN power semiconductors?

Cem Basceri - Qromis

Dr. Cem Basceri, the founder, President and CEO of QROMIS, Inc., has spent more than 20 years  in materials science and semiconductor technologies with various executive leadership and managerial positions in start-up ventures to Fortune 100 public companies.Dr. Basceri has more than 220 issued US patents and number of technical articles in refereed  journals. He holds a PhD degree in Materials Science and Engineering (North Carolina State University), and MS/BS degrees in Metallurgical and Materials Engineering.

Presentation
200mm GaN Power: Technology and Commercialization Status on QST Platform

In this talk, the following status updates on QST-based materials and device technologies, and  the commercial products development work, including 200mm GaN-on-QST device foundry services by Vanguard International Semiconductor (VIS), will be presented: (1) 200mm diameter 100V to 1,800V GaN-on-QST® HEMT epitaxial layers in commercial MOCVD reactors, (2) highperformance normally-off p-GaN based GaN-on-QST® HEMT transistors fabricated in a 200mm CMOS fab yielding state-of-art characteristics with Vth of 2.8V among the best in class, (3) monolithic integration of 200mm GaN-on-QST® power devices with integrated drivers and  control logic gates in a 200mm CMOS fab for realizing GaN ICs with effective heat dissipation and no cross-talk issue, (4) next generation 600V-to-1,500V GaN JFETs and vertical GaN Schottky  barrier diodes, and (5) VIS’ 200mm GaN-on-QST® device foundry services for the industry players by utilising its existing low cost and robust CMOS manufacturing line.

Farid Medjdoub - IEMN

Farid Medjdoub is a CNRS senior scientist and team leader at IEMN in France since 2010. He received his Ph.D. from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany as a research associate before joining IMEC in 2008. Multiple state-of-the-art results have been realized in the frame of his work. Among others, world record thermal stability up to 1000°C for a field effect transistor, best combination of cut-off frequency / breakdown voltage or highest lateral GaN-on-silicon breakdown voltage have been achieved. He has coauthored more than 130 papers and holds several patents. 

Presentation
Increasing the blocking voltage of GaN HEMTs

GaN-based switches will offer greater efficiency, power handling, and compactness compared with the well-established, widely available silicon MOSFET power devices—all factors that are critical to meeting the needs of today’s systems. However, the vertical breakdown voltage of GaN-on-silicon heterostructures is currently limited to slightly above 1000 V, preventing this technology from benefiting higher voltage applications. This talk will discuss some potential solutions for next-generation, lateral GaN-on-silicon power devices targeting 1200 V and above. This would pave the way to a much lower on-resistance than other existing technologies operating above 1 kV. 

Ralf Lerner - X-Fab

Ralf Lerner received his diploma in material science from the University Erlangen-Nuernberg, in 1993. After working 3 years at the university of Erlangen-Nuernberg in the field of compound semiconductor crystal growth he joined X-FAB Semiconductor Foundries GmbH in 1996. He is working as a project manager in the high voltage process and device development group on topics like trench isolated SOI technologies, discrete and integrated high voltage devices as well as GaN integration topics. He is author and co-author of about 20 publications and he is author of about 45 granted patents.

Presentation
Printing GaN HEMTs onto silicon CMOS

Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro-Transfer-Printing. This process includes a release etching of the GaN on silicon HEMT devices, mechanical printing of many devices in parallel followed by on-wafer metal wiring. Challenges like thermal heat removal and the required low resistive metallization have to be addressed. Results of printing experiments with small GaN HEMTs on Silicon CMOS will be presented.

Babu Dayal PADULLAPARTHI - Sanan IC

Mr. Babu D PADULLAPARTHI is a Chief Technologist & Director of VCSEL development at Sanan (Opto/IC), focusing on advanced semiconductor laser technologies for future high-volume applications. Over 20 Years of experience in compound semiconductors, both Academia & Industry, served senior executive & technical leadership roles. Prior to Sanan, Babu worked in SAE/TDK on High-speed VCSELs for Datacom. Babu received Double Masters from Andhra & Hyderabad Universities, Ph.D. from IIT Delhi; Post-Doc at Tokyo Institute of Technology in VCSELs, Visiting Scientist in RRCAT/Indore in FP-Lasers. Co-authored >40 papers in leading technical journals and conferences and inventor of 7 Granted & 4 Filed Patents. A recipient of MRS-2004 Fall Meeting Outstanding Poster Award, Monbusho & JSPS Fellowships 2005. Currently a member of IEEE IPS, OSA and SPIE.   

Presentation
Semiconductor Lasers and Detectors for DCI, 5G Front-haul, 3D Sensing & Beyond

In the recent past semiconductors lasers (VCSELs, FP & DFB) have emerged as a high-volume applications in Datacom Interconnects, 3D-sensing (FR, AR, VR), 5G-Front-haul & Automotive, Industrial Heating etc. Due to strong manufacturing bases across China, Sanan IC is aggressively investing in all key areas of Photonic Components such as VCSELs, FP-DFB, PDs etc to address new market demands. Some of the key aspects precise aperture control, WPE, i-temp operation, re-growth, facet coating etc remain big challenges for high volume manufacturability of respective VCSELs, FP & DFBs. Sanan IC will present its latest development efforts on photonic components & roadmap for product qualification and foundry services.

Pars Mukish - Yole Développement

Pars Mukish holds a master degree in Materials Science & Polymers (ITECH - France) and a master degree in Innovation & Technology Management (EM Lyon - France). Since 2015, Pars has taken on responsibility for developing SSL and Display activities activities as Business Unit Manager at Yole Développement (Yole). Pars is part of the Photonics, Sensing & Display division at Yole. Previously, he has worked as Marketing Analyst and Techno-Economic Analyst for several years at the CEA (French Research Center).

Presentation
3D Imaging/Sensing: The next killer application for laser diodes?

3D imaging/sensing is setting a new paradigm for human to device/system interaction. Such trend is currently booming in the consumer space with development of 3D face recognition features in smartphones (…) but the automotive market is also likely to experience significant growth in the next 5 years due to advanced driver assistance systems (ADAS) and autonomous driving (AD) efforts. This newly embedded technology is built around a complex set of sub-components assembled to provide scene understanding beyond the traditional 2D video. Depth perception in this market is a difficult task knowing the constrained cost, space and power considerations. In this field, laser diode technologies (including VCSELs and EELs) represent critical elements for 3D imaging/sensing device and module development.  During this presentation, we will present an analysis of opportunities for laser diodes in the 3D imaging/sensing business, remaining challenges to be handled by laser device manufacturers and impact of recent trends on market and industry. 

Samuel Sonderegger - Attolight

Samuel has headed Attolight since its creation in 2008 and helped to transform Attolight’s quantitative cathodoluminescence from manual lab and FA tools into full wafer fab ready tool.  Samuel holds an MS of Physics from EPFL and holds a PhD in physics from the same university. 

Presentation
Killer defect inspection in GaN high volume manufacturing by full wafer cathodoluminescence

We will give a short introduction to high resolution cathodoluminescence and highlight its capability to detect buried (subsurface) defects combined with nanometer scale mapping resolution.  We will introduce example applications where cathodoluminescence can be used to detect defects in III-V manufacturing, research & development and failure analysis. Finally, we will present the Säntis 300, Attolight’s fully automated solution for in-line defect inspection in compound semiconductor manufacturing. We will focus on GaN manufacturing and other particular use cases to highlight the added value of the Säntis 300 in compound semiconductor manufacturing and R&D. 

Jos de Jong - Nouryon

Presentation
Exploring safety aspects of metal organic precursors

Joe Lu - Sino Nitride Semiconductor

Joe Lu received the B.S. degrees from CCIT, Taiwan, R.O.C. in 1986, the M.S. degrees from CCIT, Taiwan, R.O.C. in 1995. He has been with Visual Photonics Epitaxy Co., Ltd ,VPEC, since 1997, in charge of the epitaxy process development of GaAs based HBT epi wafer. He is currently the General Manager Assistant of Sino Nitride Semiconductor CO., LTD, in charge of the R&D of GaN power and RF devices.

Presentation
The Fabrication of High Quality Low Cost Free-standing GaN Substrates and GaN Templates

Bulk GaN substrate has many advantages such as low dislocation density, high heat dissipation rate as well as no lattice mismatch and thermal mismatch for its homoepitaxial characteristics in applications like short wavelength light-emitting diodes, blue or green light laser diodes, high power electronics and microwave devices compared to their foreign substrates. By introducing two new technologies-the substrate separation and acid wet aching, high quality 2-inch bulk GaN wafer with dislocation density of 5×105 cm-2 was obtained by HVPE homoepitaxy. The result showed that the FWHM of the (002) and (102) rocking curves achieved . 

39.9 arcsec and 47.5 arcsec respectively, indicating their high degree of crystalline quality. Furthermore, the roughness of the final wafer is 0.11nm and the total thickness variation is below 15um. Also, we launched 4-inch free-standing GaN substrates with dislocation density below 5×106cm-2 at the beginning of this year.  We have developed a large-scale HVPE system which can produce 21 2-inch wafers  per run and substantially reduced the production cost. It is the largest reported HVPE system all over the world. In order to settle the problem of thickness uniformity、growth rate and surface defect, we simulated the flow field of the HVPE system with different reactor and equipment structure using SolidWorks and Fluent. By modifying the reactor and furnace structure, now we succeed to produced 21 wafers of 2-inch with good thickness uniformity and smooth surface. And the growth rate has achieved 100um/h. 

Mark McKee - Veeco

Mark McKee is currently Director, Product Marketing for Veeco’s MOCVD business. He is responsible for driving new product introductions to enable market leadership. Prior to this role, he held key positions in product marketing and project management. Prior to joining Veeco, he was employed by Emcore Corporation, a leader in MOCVD equipment manufacturing where held positions as Staff Scientist and Director of North American Sales. He is a 30+ year veteran of MOCVD with extensive background experience in semiconductor technology. 

Mark McKee received his MS degree in Materials Science from Rutgers University, NJ. He has authored and co-authored over 25 technical publications.

Presentation
Accelerating Photonics Growth through Advances in High Performance As/P MOCVD and Wet Processing Technology

Photonics devices based on Arsenic/Phosphide (As/P) materials such as VCSELs and EE lasers are seeing high demand in 3D sensing, LiDAR, data communication, infrared illumination and fiber pumping. Double-digit growth over the next five years is expected as existing applications proliferate and new applications become available [1]. Manufacturers of photonics devices rely on Metal Organic Chemical Vapor Deposition (MOCVD), Lithography, and Wet Processing technology and equipment for their device production needs. As the critical first step in device manufacturing, MOCVD epitaxial growth technology must lead the way to meet growing customer demand for tighter performance requirements by improving compositional uniformity and dopant control while reducing cost-per-wafer via higher productivity, best-in-class yields and lower operating expenses. For epitaxy growth in VCSELs, key parameters are excellent within-wafer, wafer-to-wafer and run-to-run thickness uniformity of the DBR and MQW layers as well as the Fabry-Perot cavity dip uniformity. Equally important for VCSELs are the compositional and doping uniformity as well as background carbon and oxygen levels. The epitaxy films must also have very low defectivity. The above also holds true for EE lasers, except they do not include DBR layers. This presentation will use data to demonstrate how device manufacturers can use a new As/P MOCVD platform to achieve excellent uniformity and repeatability over long campaigns. Wet Processing is also critical for these photonics applications as the epitaxy layers must be patterned in the production process. Patterning is done using wet etch and metal lift off (MLO). Critical parameters for wet etch include etch uniformity and endpoint detection. Highly uniform film layers enable superior device performance and yield. In addition, a production-proven solvent-based process for MLO and photoresist strip steps is required to create the pad layers. This presentation will also show how immersion followed by spray enables complete removal for difficult to remove resists at high throughput.

Hiromi Fujita - Asahi Kasei

Mr. Fujita received his MSci degree in Physics from Tohoku University, Japan. He has 13 years of experience in design, growth and processing of electronic and optical devices based on antimonide related materials, such as hall-effect magnetic field sensors. He is a chief researcher and a R&D group manager in Asahi Kasei Microdevices corporation, where he is responsible for the development of new mid-infrared LEDs and sensors.

Presentation
Antimonide LEDs for gas sensing

Unlike visible to near-infrared light, mid-infrared (mid-IR) light has attracted much less attention within the compound semiconductor community, due to limited commercial applications. However, the situation is changing. Following the recent concern surrounding global warming, technologies for monitoring and reducing greenhouse gases, such as carbon dioxide (CO2) and methane (CH4), are attracting a lot of attention. Among them, gas sensing technology based on mid-IR light absorption can take an important role. Antimonide LEDs and sensors, which have a narrow-bandgap and work in the mid-IR region, are ideal light sources and detectors for such application. In this presentation, recent progress in antimonide devices will be reported.

Norbert Lichtenstein - II-VI

Dr. Norbert Lichtenstein is a Director for Research & Development at II-VI Laser Enterprise. He received his PhD in physics from University of Stuttgart for his work involving high-power semiconductor lasers. He joined Uniphase Laser Enterprise in 1998 where at the site in Zurich he held various positions in development and management within JDS Uniphase, Nortel Network, Bookham, Oclaro and II-VI including responsibility for development of 980 nm and 1480 nm telecom pump lasers, high-power laser diode products and VCSELs. In his current role he is overseeing chip development of high volume products for consumer applications at II-VI. 

Presentation
The tremendous opportunities for the VCSEL

Historically VCSEL have addressed mostly niche applications such as simple sensing of gases or in oscillators of atomic clocks. With the application in datacom for short reach connections in data centers or smart cables first high volume applications have been arising. Now new applications such as the upcoming smart touch interfaces, people detection, face recognition or 3D scanning are completely changing the human-machine interface. The implementation of these applications in a plurality of compact consumer devices such as smartphones and tablets, TV, PCs & notebooks, virtual reality devices, smart home / IoT, automotive & drones or gaming only is possible by the exceptional properties of the VCSEL such as efficiency, temperature stability and high volume manufacturability. Future applications are expected in autonomous driving and going forward in augmented and virtual reality. 

Liyang Zhang - Enkris

Liyang Zhang received the M.Sc. degree from Zhejiang University in 2008, the Ph.D. degree from KU Leuven in 2013, with her research activities performed in collaboration with the GaN Group, IMEC. She is currently a Principle Engineer at Enkris Semiconductor. Her current research interests include the growth of III-nitrides optoelectronic devices.  

Presentation
Mastering the manufacture of microLEDs on silicon

For micro LED displays, monolithic integration of arrays is a preferable approach to producing high-resolution displays, because it can directly transfer a processed LED wafer to a target backplane through wafer-bonding technology. For this approach, production ideally involves the use of large, flat epi-wafers with a narrow wavelength bin range and a low defect level. These characteristics are critical to improve the final yield. GaN-on-silicon technology offers tremendous potential to address these epitaxy requirements over incumbent sapphire technology. Our recent progress on the growth of GaN-on-silicon epiwafer for micro LED displays will also be discussed

Masahiro Murayama - Sony Corporation

Masahiro Murayama joined Sony Corporation in 2008 as a research engineer of laser diodes. He has been engaged in development of GaN-based lasers, which includes Blue-violet laser for Blu-ray discs, and Green and Blue ones for laser projectors. He received his M.E. degree in Applied Physics from Waseda University, Japan in 2004 and holds an overall 15 years of experience in semiconductor laser technology.

Presentation
Watt-class blue and green lasers

High-power visible laser diodes have recently attracted a great deal of attention as light sources for display applications such as high brightness and large-sized projectors. We present high-power and high-efficiency blue and green lasers which were fabricated on free standing c-plane and semipolar {20-21} GaN substrates, respectively. We have successfully achieved more than 5 W output power operation for our 465 nm-blue lasers and 2 W for our 530 nm-green ones. These lasers are promising light sources for future laser display applications meeting the ITU-R Recommendation BT.2020.