Presentations at CS International 2025 are grouped into 5 key themes which collectively provide complete coverage of the compound semiconductor industry.
If you are interested in speaking at CS International 2025, please contact info@cs-international.net or call +44 (0)24 7671 8970.
To achieve the goals of decarbonization and reduction of energy consumption higher efficient electrical system solutions are required. Here GaN with its intrinsic superior material properties over Si is a key enabler for advanced semiconductor devices meeting those requirements. To sustain the acceleration of compound semiconductor solutions AIXTRON addresses the increased demand in performance, fab efficiency and cost per wafers by the introduction of new products and product variances. In this talk we will present the recent progress on our 2023 launched G10-GaN platform for 150mm & 200mm wafer size as well as outstanding results on 300mm GaN for a variety of GaN based applications.
Although qualified up to 650 V voltage operation, lateral GaN devices are subject to severe limitations for higher voltage applications such as a large device size, surface trap related reliability concerns or the absence of avalanche breakdown due to the peak electric field at the gate vicinity. This led to vertical GaN development, which is under extensive investigations worldwide as all the above-mentioned issues could be cured. State-of-the-art vertical GaN devices are fabricated on bulk GaN substrates, thanks to the high quality of the substrates in terms of low dislocation density and low impurity concentrations. However, they are prohibitively expensive, and only rather small area substrates are available. In this talk, we will describe the current status of GaN-based fully vertical devices grown on large diameter silicon substrate with a particular focus on ongoing efforts in this domain, which are part of the EU-funded YESvGaN project. Despite the common belief about the limited drift layer thickness or wafer diameter due to the large mismatch in coefficient of thermal expansion (CTE) between Si and GaN, we will show that a local substrate removal with suitable related growth and process optimization enabled outstanding initial achievements such as extremely low on-resistance in 1200 V-class fully vertical pn diodes with avalanche breakdown capability. Furthermore, the enhancement of the mechanical robustness of the resulting membranes during the fabrication process enables the implementation of a heat sink based on thick Copper and consequently high on-state current spreading well-above 10 A.
Gallium Nitride (GaN) power devices have seen increasing adoption in various industries due to their ability to operate at higher efficiencies, frequencies, and temperatures compared to traditional silicon-based devices. The ramp-up in GaN based power devices is driven by key factors such as their expanding use in consumer electronics, electric vehicles (EVs), data centers, and industrial applications. Traditionally, X-ray metrology involved manual equipment configuration, analysis, and reporting, which could be time-consuming and prone to human error. Over the years, Bruker has automated these processes, significantly improving throughput and accuracy. Automated X-ray metrology systems now provide real-time, in-line measurements that are integrated directly into the manufacturing process, allowing for immediate feedback and corrective actions when necessary. This enables manufacturers to accelerate R&D, production line ramp-up, and maximize yield, thus shortening time to market and improving profitability.
The rapid growth of electric vehicles and power electronics has driven a surge in demand for gallium nitride (GaN) due to its exceptional properties for high-performance applications. Semilab’s metrology solutions address key challenges in GaN material characterization and device manufacturing. This presentation explores the structural and compositional complexities of GaN and highlights the Semilab SPL product line as a powerful solution, alongside other GaN metrology use cases. With these advancements, Semilab aims to support the detection of impurities with comprehensive metrology solutions, enabling the seamless integration of GaN technology while ensuring superior device performance and reliability.
A novel workflow for analysis of a GaN device is demonstrated by combining state-of-the-art lamella preparation and (S)TEM analysis. Lamella sample preparation using a combination of noble ion sources is used to minimize damage and contamination, enabling accurate epi-layer characterization, chemical analysis, and electric field mapping via (S)TEM. A pristine lamella was prepared from an aluminum gallium nitride (AlGaN/GaN) on sapphire epitaxial stack by switching between ion sources, namely xenon and argon plasma ions, rather than a traditional Ga-FIB system. Subsequent analysis in (S)TEM enabled the examination of electrical behavior, atomic-scale chemical mapping, lattice-resolved interface imaging, and strain and grain orientation analysis. This innovative workflow demonstrates significant potential in enhancing the analytical accuracy for the compound semiconductor industry by allowing the identification of structural and material defects and quality variations at sub-nanoscale dimensions, thereby decreasing learning cycle time.
Gallium Nitride (GaN) is a wide-bandgap semiconductor with exceptional properties, making it an ideal material for the new generation of optoelectronic and electronic devices such as UV LEDs, micro-LEDs, and RF components. Molecular Beam Epitaxy (MBE) has proven to be an effective method for growing high-quality III-Nitride epilayers due to its precise control over layer thickness, composition, purity and low growth temperature. This abstract explores the emerging growth opportunities for Nitride MBE production Machines, with a particular focus on the competitive advantages it offers in the development of next generation’s devices, driving the future of optoelectronic and electronic technologies.
Gallium Nitride (GaN) transistors have emerged as pivotal components in personal electronics, enabling lighter, smaller, and faster-charging devices. Yet, their full potential remains untapped. GaN technology's role in the digitalization revolution is still underestimated. As we transition into the post-silicon era, GaN's superior efficiency and high-frequency operation open avenues for breakthroughs in AI computing and beyond. Strategic investment in GaN applications is essential to capitalize on its opportunities for economic growth and technological advancement.
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X-ray characterization of compound semiconductors has been used for over three decades, extensively in the lab space and relatively limited in the fab space. However, in the past five years the demand for X-ray metrology is noticeable increased, due to the introduction of new materials for power devices like SiC and GaN, photonics, quantum computing and new complex thin film structures. In this presentation, I will provide an overview of the X-ray metrology solutions and the progress in the X-ray technology which have enabled the transition from the lab to a fab environment.
MicroLED displays are set to transform the future of display technology, offering superior brightness, energy efficiency, and longevity compared to traditional displays. As the demand for high-performance displays continues to rise, overcoming the challenges of photonic packaging becomes increasingly important. This presentation focuses on the precise replication of lenses, ensuring tight specifications for alignment accuracy and maintaining minimal residual layer thickness and variation below the lens.
MicroLED technology promises to revolutionize displays across industries, from augmented reality to automotive applications. However, the challenge of efficiently transferring millions of microscopic LEDs has long been a barrier to widespread adoption. This presentation explores the innovative MicroSolid Printing process, which addresses the critical 'transfer challenge' in microLED manufacturing. We'll discuss how this technology enables high-throughput, high-yield production of microLED displays, its implications for display quality and energy efficiency, and its potential to unlock new possibilities in human-machine interfaces. Attendees will gain insights into the latest advancements in microLED fabrication and their impact on future display technologies.
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Explores pioneering advancements in mass-producing and commercialising MicroLED microdisplays for Augmented Reality (AR). It covers Porotech’s unique technology platforms and initiatives to scale production, including cost reduction, supply chain optimisation, and yield improvement. It also discusses the potential market impact of AR applications and how MicroLED can drive innovation in and beyond consumer electronics, enterprise, and industrial sectors.
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Over the last twelve years, Aledia has developed two unique 3D microLED technologies using nanowire growth on 200 and 300 mm silicon substrates. In this presentation, we will first describe how the efficiency of the devices is not negatively impacted at smaller device sizes, making Aledia’s microLEDs an ideal solution for a wide range of displays, including wearables, automotive, and large displays. We will as well introduce another technology where directive light emission from the nanowires dramatically enhances efficiency for AR applications.
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With the demand for power device technologies is growing across a broad variety of applications, device makers are developing production solutions leveraging multiple new material sets including Silicon Carbide (SiC), Gallium Nitride (GaN) and others. Growth in demand has driven wafer size migrations, 150mm-to-200mm and 200mm-to-300mm for SiC and GaN, respectively. These wafer size migrations have an impact on the incumbent process control technology’s ability deliver increased sensitivity defect detection technologies, while offering higher throughput than currently available on smaller wafer sizes and maintain relative cost parity in what is a very cost sensitive application space. This presentation addresses a few of the more fundamental challenges that can occur in the production of SiC and GaN based devices at these larger wafer sizes and explores solutions for the more critical process steps, including some novel and value adding hardware and software capabilities.
Independently from the material, wafer substrates undergo a long way from raw material to epi-readiness polishing results. The ongoing miniaturization of chip structures and the simultaneously increasing requirements for wafering processes, such like wafer slicing and surface finishing, generate a more and more complex environment for process developers and operators. The permanent pressure of working between Cost of Ownership effective processes and realizing the highest possible quality, ideally with maximized machine uptime and production yield challenge wafer manufacturers more than ever. Lapmaster Wolters solves these challenges with its innovative Lapmaster Wolters Precision AI approach, which uses data-based advanced analytics of dozens of data sources from its slicing and polishing machines to help process developers and operators to do both – Maximize the desired wafer quality while minimizing the overall Cost of Ownership by preventing time-consuming downtimes or costly material losses. The usage of comprehensive data-based software solutions will revolutionize the way of process development, since sophisticated coherences and parameter dependencies become visible and easily interpretable, even for unexperienced staff.
In traditional semiconductor wafer fabrication facilities, wet etching and stripping processes are typically carried out in separate equipment. However, Siconnex equipment enables the integration of multiple processes within a single tool. This capability provides clear advantages, as it allows for several etching and stripping steps to be performed within a unified process flow. This integrated approach enhances wafer quality by improving uniformity and etch control, while also reducing the need for operator intervention. Furthermore, it optimizes chemical usage and enables more precise process control. An example process flow in the Back-End of Line (BEOL) for materials such as Ag (silver), Ni (nickel), Ti (titanium), and photoresist stripping highlights these benefits, demonstrating how integrated processing can streamline operations, improve throughput, and achieve higher-quality results.
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SiC semiconductors are being deployed in a wide variety of use cases that demand robust high-voltage, high-performance operation from small form factor, high-power-density designs where stable and reliable operation is needed independent of temperature. Creating the best device technology enables the highest performance, efficiency, and reliability, which opens the opportunities for success. Navitas’ ‘trench-assisted planar’ technology provides the best-in-class performance in the field, enabling high-yield manufacturing, fast and cool operation, and extended long-life reliability.
The production of InP and GaAs based laser and VCSEL structures requires tight process control during front end production. In-situ metrology during epi for process control is established and mandatory but not sufficient. Post-epi wafer mapping with photoluminescence and white light reflectance complements the in-situ metrology and allows for a much deeper analysis of the structures. Therefore, results from EpiX, LayTec’s best in class wafer mapper, in combination with analysis of in-situ data will be presented. Also, it will be demonstrated how metrology is employed further downstream during plasma etching of the epi wafers highlighting the high value of connected metrology along the manufacturing chain.
EXALOS recently demonstrated SLEDs exhibiting increased optical confinement factors (modal gains) at 512 nm by implementing an InAlN-based n-type cladding in the epitaxial structure. By leveraging the latter approach and by growth conditions optimization, here we demonstrate SLEDs devices at 525 nm and discuss their performance. A direct comparison with LDs realized from the same epitaxial wafer, exhibiting 10 nm longer emission wavelength, will be presented. This result, together with varied experimental data will allow us to elucidate the challenges faced when extending the SLED wavelength in the true green spectral range and beyond.
The rapid evolution of the space industry, driven by reduced costs to orbit and increased launch availability, has catalyzed unprecedented growth in the space sector and a surge of new startups. All space applications require reliable power sources, contributing to the expansion of the photovoltaic (PV) segment. Conventional space-grade multi-junction solar cells utilize a dual-junction MOCVD-grown GaAs epi-stack on a germanium (Ge) substrate, with lithography/PVD-based interconnections. To enable the anticipated 10-fold increase in production scale over the next decade, a fundamental transformation of these three key components - MOCVD growth, Ge substrates and metallization - is essential. Geopolitical factors have further complicated this landscape. Recent export restrictions imposed by the Chinese government have led to a more than twofold increase in the price of Ge raw materials. This work presents a solution that addresses these economic and material challenges by enabling the reuse of Germanium substrates. This approach lowers the cost of ownership and unlocks much greater potential for high-volume production of III-V solar cells on Ge substrates. In parallel, the growing consumer market is driving rapid advancements in photonic devices, such as micro-LEDs, long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs), and imagers operating in the Near-Infrared (NIR) and Short-Wave Infrared (SWIR) spectrums. While Gallium Arsenide (GaAs) substrates dominate current photonics device manufacturing, emerging research highlights the advantages of Germanium over GaAs. Photonic device manufacturing is traditionally the domain of III-V integrated device manufacturers (IDMs) and foundries. However, the development of cutting-edge photonic chips requires close collaboration between III-V companies and Silicon semiconductor/CMOS players to improve form factors, enhance device performance, and reduce production costs. This integration is currently constrained by the limited wafer size of GaAs and the contamination requirements of CMOS fabrication. Umicore addresses these challenges by developing 8” and 12” Ge substrates that bridge the gap between the III-V and semiconductor industries. Germanium’s compatibility with CMOS specifications and the larger wafer sizes facilitate integration with existing semiconductor processes. Additionally, substrate reuse technology supports high-volume photonics applications compatible with CMOS, positioning Ge as a critical enabler in both PV and photonics industries.
We demonstrated over 20% wall-plug efficiency (WPE) of GaN VCSELs emitting at 420 nm wavelength. Such a high performance is achieved by the following three key technologies we have developed, 1) high-quality semiconductor-based (AlInN/GaN) distributed Bragg reflectors (DBR), 2) simple nano-height mesa for lateral optical/current confinements, and 3) in situ cavity length control with in situ reflectivity spectra measurement. Towards even higher WPE, we plan to include our additional technologies into the VCSELs, 4) low resistive tunnel junctions for p-contact and 5) highly conductive AlInN/GaN DBR for n-contact. In this talk, we show these technologies and update our VCSEL performances.
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High quality, 2-inch diameter aluminum nitride (AlN) substrates have become widely available with 100mm soon to become commercial. These substrates have enabled growth of very high-quality aluminum-gallium nitride alloys which are pseudomorphically strained to match the lattice of the underlying AlN substrate. This high quality material has allowed the development of superior performance UVC LEDs at wavelengths shorter than 275nm.. In addition, the low extended defect density has made it possible to take advantage of distributed polarization doping. Pseudomorphic growth and distributed polarization doping have made the achievement of new devices possible, such as the UVC laser diode and far UVC LEDs.
AlN is an emerging semiconductor offering dramatic and short-term exploitation in power switching, high temperature electronics, RF electronics and optoelectronics facilitated by breakthroughs in new doping technologies enabled by low temperature, non-equilibrium epitaxy. Contrary to common understanding, low-temperature, metal-rich vacuum processes are shown to have higher surface diffusion lengths than high temperature nitrogen-rich methods. AlN’s band structure facilitates dramatically higher performance than possible with GaN especially for p-type devices. ~1000-30,000,000 times improvements in the AlN n and p-type resistivities (
Bulk AlN substrates with high structural quality are best suited to exploit the full potential of AlGaN-based (opto)electronic devices. However, further development and commercialization is hindered by the lacking availability of high quality AlN substrates in terms of quantity and size. So far, the diameter expansion has been limited by the low lateral growth rates or the formation of defects. In this paper, we report on a fast increase of the crystal diameters by subsequent growth runs with huge expansion angles of about 45°. The high structural quality of the first seed generation can be preserved (dislocation density TDD ~ 103cm-2). First epi ready 2-inch AlN substrates are demonstrated. The process outlines a shortcut path to industrially relevant AlN crystal diameters of 100 mm or more compared to all other published expansion processes for bulk AlN crystals so far.
Gallium oxide is an ultra-wide bandgap semiconductor with the potential to enable efficient power electronic devices beyond the wide bandgap revolution. However, the high breakdown electric field that enables the potential benefits brings its own challenges in device engineering to realize these benefits. By engineering the electric fields with novel high-κ heterojunctions as well as reduced surface field and edge termination structures, we show how to unlock the high breakdown field of gallium oxide to realize the efficient power devices of the future.
This presentation explores the epitaxial growth and application of AlScN and AlYN in electronic devices. High-quality AlScN and AlYN layers were grown by MOCVD, revealing benefits such as higher sheet carrier density and lattice-matched growth to GaN for improved transistor reliability. The structural and electrical properties of these layers were analyzed, and progress in HEMT performance, achieving output power beyond 8 W/mm at 30 GHz, will be discussed. Additionally, the ferroelectric properties of AlScN and AlYN layers will be compared to sputtered layers, highlighting the measured coercive field of 5.5 MV cm-1 for AlScN and challenges with AlYN.
(Ultra)wide bandgap metal oxide semiconductors including Ga2O3 and In2O3 have attracted enormous interests. They could offer markedly larger figures of merits for power and RF applications than other known semiconductors, as well as excellent scalability and low thermal budget. Thus they are promising for More Moore, More than Moore, and Beyond Moore applications. This talk will cover the potential of those large bandgap oxides for IC research.
Cubic boron nitride (c-BN), an ultra-wide band gap semiconductor with a band gap of approximately 6.4 eV, has emerged as a promising material for next-generation electronic and optoelectronic devices. Its exceptional thermal conductivity, chemical stability, and high breakdown electric field make it ideal for power electronics, extreme-environment applications, and possibly deep ultraviolet optoelectronics. Unlike diamond, c-BN has demonstrated multiple, relatively shallow impurity levels yielding n- and p-type doping, potentially enabling versatile device design. This talk will explore recent advances in c-BN synthesis, including high-quality crystal growth techniques. By addressing challenges such as scalable production and material uniformity, we highlight the transformative potential of c-BN in enabling next-generation semiconductor technologies.
