Presentation at CS International 2022 are grouped into 5 key themes which collectively provide complete coverage of the compound semiconductor industry.
If you are interested in speaking at CS International 2022, please contact info@csinternational.net or call +44 (0)24 7671 8970.
TBA
The IPCC (Intergovernmental Panel on Climate Change) released their sixth assessment report in August 2021 and the report paints a catastrophic analysis of our current climate, along with several increasingly dystopian views for the future. The main culprit for this view is Carbon Dioxide emissions created by energy generation. This presentation will address some of the results creating this concern, along with a discussion of how 5G and 6G networks are addressing the energy consumption issues. The presentation will close with discussion of how the advantages of compound semiconductors will enable these future, greener networks.
To follow
Directly modulated lasers are cost-effective optical transmitters with low power consumption. We present two of our developed lasers. The first is membrane lasers on SiO2/Si for silicon photonics. The power consumption is 100-fJ-class per bit due to the large optical confinement. The bandwidth reaches 30 GHz but is limited by the thermal problem coming with low-thermal-conductivity SiO2. The latter, membrane lasers on SiC, are for beyond 400GbE. The high-thermal-conductivity and low-refractive-index SiC resolves the thermal problem while maintaining the optical confinement, resulting in 60-GHz bandwidth. This indicates that SiC is adaptable for not only high-power electronics but also laser technology.
Electron Enhanced Material Processing EEMP™ Systems provide compound semiconductor device manufacturers with new processing capabilities, including, high throughput atomic layer etching, atomically smooth polishing, and stoichiometry-preserving, damage-free etching and cleaning at room temperature without cooling for small research substrates up to 300mm production wafers. VelvEtch EEMP Systems utilize a unique, asymmetrical bias-signal to pull discrete, wafer-scale, waves of precisely controls electrons from a DC plasma to drive excited-state surface chemistry reactions at material-specific, electron-energy dependent thresholds to deliver processing results that open up new opportunities to improve device performance and reduce device costs.
To follow
To follow
Avicena is developing highly parallel LED based optical link technology for chip-to-chip interconnects in HPC, Cloud computing, and processor-to-memory disaggregation applications. The technology is based on arrays of novel GaN high-speed microLEDs, leveraging the LED display ecosystem, and Si based PDs integrated into a single CMOS chip and connected with multi-core fiber bundle. At energy efficiency of 10Tbps/mm2 @ < 0.5pJ/bit combined with excellent reliability over the industrial temperature range of -40°C to +150°C this new class of optical interconnects eliminates the inherent power, reach and interference limitations of electrical links in chip-to-chip communications.
GaN-based LEDs have established themselves over the last three decades as the dominant light source for the automotive sector up to general lighting. In contrast to these large-area highperformance LEDs, microLEDs (µLEDs) with dimensions of 1 to 50 µm are becoming increasingly interesting, mainly driven by developments in display technology. Beyond this application purpose, many other applications can be derived and have been proven by QubeDot’s SMILE Platform. SMILE is an acronym for “Structured Micro Illumination Light Engine” and covers our microLED array product range with different pixel counts and sizes, wavelengths and intensities. All light sources are directly driven via computer and pattern creation works out of the box. Technical details of these SMILE platforms and pilot application examples on how to utilize them within each application will be presented in the talk.
µLED displays can challenge LCD and OLED with better performance, efficiency and lifetime but adoption is limited by high costs. Using simple equipment fluidic assembly can build 4K displays in minutes. eLux produces high yield and uniformity by removing weak LEDs before assembly. Defects mapped by micro-photoluminescence are captured so only known good die are harvested for assembly. Fluidic assembly is gentle so excess µLEDs are recycled and the combination of selective harvest with recycling enables near 100% utilization of µLEDs. Low-cost high yield assembly using known good die is a route to economic mass production of µLED displays.
Silicon carbide belongs to the hottest topics of the power semiconductor industry at the moment, mainly driven by their potential to serve green energy solutions, the substantial progress in device and material quality as well as related double-digit annual revenue growth rates. The presentation will sketch more details of the historic developments as well as the key aspects for future growth which is expected in industrial and automotive applications as well. A key ingredient for future success is the right interface between chip and system and thus, selected package options will be highlighted.
The demand for Silicon Carbide (SiC) power devices is expected to grow fast in the next decade, driven by the mass adoption of electric vehicles (EV). However, the number of suppliers, especially at the material level (SiC ingots, bare wafers and epiwafers) is still very limited. Furthermore, the market is largely dominated by Japanese, US and European players. Yet, the patenting activity covering the whole SiC supply chain shows that many more players are striving to get ready for SiC demand to take off. Importantly, Chinese players are not standing still, and the patent landscape analysis draws a first picture of a complete domestic supply chain emerging in China.
TBA
To follow
TBA
The majority of high-power applications at microwave frequencies is still dominated by vacuum tube technology due to its maturity and power scalability. In recent years, a growing number of system operators has started the transition towards solid-state powered solutions, mostly employing GaN-based devices. Operating GaN HEMTs at voltages of 100 V ore even beyond that, permits substantially higher power densities than those achieved by commercial devices. Raising the supply voltage also changes the I-V characteristics of the device in favour for the high-power circuit designer. These combined virtues allow for a reduction of matching network losses and, ultimately, for the realisation more compact and efficient systems.
TBA
TBA
Awaiting presentation abstract.
Awaiting presentation abstract.
TBA
Awaiting presentation abstract.
Awaiting presentation abstract.
TBA
TBA
TBA
TBA
TBA
