Presentation at CS International 2020 are grouped into 5 key themes which collectively provide complete coverage of the compound semiconductor industry.
If you are interested in speaking at CS International 2020, please contact [email protected] or call +44 (0)24 7671 8970.
As 5G network and device deployments increase, the electronics industry is realizing that this is both a blessing and a curse. The blessing is these new applications will increase quantities at a time when the market is flattening. The curse is that backhaul requirements create more optical backhaul and transport opportunities. This presentation explores drivers and trends for data traffic and the impact on GaAs content in front-ends. It will also address the GaAs opportunities in fiber transport applications and assess the GaAs foundry capabilities in this supply chain versus the pure-play RF GaAs foundries.
Vertical-cavity surface-emitting lasers (VCSELs) are now key optical sources in gigabit ethernet, high-speed optical-area networks, and computer links because of the advantages they offer, such as low threshold current and a small structure. During conventional blade dicing of VCSELs fabricated on gallium-arsenide (GaAs) substrates, GaAs wafers are fragile and chipping or edge cracks can easily occur. Hence, in the case of conventional saw processes, generally the kerf must be wider and the blade feed speed must be slower in order to avoid device damage due to chipping or edge cracks, which cause limitation of productivity. Plasma dicing has been proposed as a new wafer singulation method. The plasma dicing process is a technology to dice the entire wafer into chips at once [3]. As the wafer is processed using a chemical reaction by plasma, plasma dicing does not cause any physical damage to chips, regardless of the wafer thickness. Thus, the plasma dicing process eliminates chipping and cracks at the edge of chips. In addition, the number of chips which can be taken from one wafer are able to be increased by reducing kerf width, which is approximately the same as the opening width of photo resist during the lithography process before plasma dicing. In this report, we apply plasma dicing to VCSEL on GaAs substrate and demonstrate GaAs dicing, with no chipping at the edge of VCSELs or surface particles.
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This presentation will focus on Plessey’s pioneering proprietary approach to enable manufacturing of monolithic microLED arrays using gallium nitride (GaN)-on-silicon (Si) technologies to develop better optimised AR/MR and wearable displays applications. It describes the problems associated with incumbent micro-display technologies which are prohibiting the advancement of new innovative technologies which microLEDs can help solve.
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The Power Device industry is rapidly developing new SiC power products with best electrical performance, but this also requires new PVD system concepts with highly uniform coating thickness results and demanding run to run repeatability performance. As substrate costs play a significant role, proven system performance with high yield combined with high uptime / low maintenance time are essential to achieve the required CoO in production.
With the commercial availability of GaN-based power devices, the positioning of the technology versus next best silicon or SiC-based alternatives is a hot topic in the industry. Reliability aspects and system benefits are key issues driving the adoption of the technology. We will discuss a number of use cases such as hyper-scale datacenter and high-density telecom power supplies to outline decision factors in favor of GaN-based solutions. We will compare performance indicators towards the next best alternatives. The talk addresses both power supply engineers as well as market analysts and trend scouts.
Historically, silicon-based power semiconductors have served as the backbone of power systems, but wide bandgap (WBG) devices are changing this. As the market for these devices grow, it is important to understand what drives the commercial market to use WBG devices versus the more established Silicon technologies. WBG materials deliver results that aren’t possible with silicon in the areas of Power and RF. These improvements can have a significant impact in reducing overall electricity consumption worldwide, and in particular, SiC is enabling electric vehicles with longer range and lower cost. This adoption is driving a very rapid expansion for the SiC market and supply chain.
GaN-on-Silicon is a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mm GaN-on-Silicon technology to accelerate GaN market adoption. G-FET™ & G-Drive™ product portfolio, provide extensive power range capabilities, as well as power switching solutions that combine the super-fast GaN-on-Silicon switch with its appropriate driver IC controlled by embedded diagnostics, protections and, much more functionalities. Those “easy to use” GaN solutions will help power innovators extending power conversion roadmaps, by creating smaller, more efficient and higher-performing power converters.
This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present the likely key applications, pricing trends, the supplier landscape and the latest ten-year forecasts by application for both technologies. It will identify which technologies can compete with silicon in terms of device type and likely adoption by end applications. The SiC & GaN wafer substrate supply chain will also be discussed. Finally, I will try to answer the question: Are Cree/Wolfspeed's expansion plans (announced in May 2019) intended to monopolize the SiC market?
A major issue faced by the SiC industry is linked to the question of how to ramp up the production and meet the ever-growing demand of materials for the power electronics sector. In order to achieve this, the SiC wafer supply needs to develop a means to drive the cost of production down. One method of doing this is by improving yield. Silicon Carbide wafer growth and device manufacturing have improved significantly but the process yields are still too low due to the high densities of crystalline defects, particularly as substrate sizes increase, which are damaging the device performance and their long-term reliability. It is therefore critical to develop new metrology techniques that are capable of detecting these defects allowing to understand how they form and giving a means to reduce or eliminate them. We introduce high speed X-ray diffraction Imaging (XRDI, sometimes known as X-ray topography) as one of these techniques. It enables the non-destructive detection of the detrimental TSDs, TEDs, SFs and BPDs on all types of SiC wafers, including n+ doped substrates, without some of the limitations of existing etch and optical inspection methods. It is a viable candidate to replace destructive KOH etching in the long term as a defect metrology and reduce the cost of SiC wafers manufacturing. In this talk we will discuss the latest developments in XRDI which enable fully automated high throughput measurements at high resolution for integration into modern wafer production lines to enable direct feedback into the process development.
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Blue vertical-cavity surface-emitting lasers (VCSELs) are strongly desired for many applications, including adaptive laser headlamps, retinal scanning displays, visible light communication systems, and processing of metals such as copper and gold. For many applications, high output powers and low-divergence output beams are preferred because they allow high efficiency fiber coupling and high optical density to be realized with very simple optics. This presentation will focus on recent progress in high power and mode control technologies of blue VCSELs and VCSEL arrays.
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