Two days, 5 themes, over 30 inspiring presentations

Presentation at CS International 2020 are grouped into 5 key themes which collectively provide complete coverage of the compound semiconductor industry.

If you are interested in speaking at CS International 2020, please contact [email protected] or call +44 (0)24 7671 8970.

2020 Speakers Include

IHS Markit
KLA Corporation
Plessey Semiconductors
Sony Corp.
Stanley Electric
Strategy Analytics

2020 Presentation Abstracts

Satisfying demand for more data

Assessing the impact of 5G front-ends on the world' leading GaAs fabs

Presented by Eric Higham, Strategy Analytics

As 5G network and device deployments increase, the electronics industry is realizing that this is both a blessing and a curse. The blessing is these new applications will increase quantities at a time when the market is flattening. The curse is that backhaul requirements create more optical backhaul and transport opportunities. This presentation explores drivers and trends for data traffic and the impact on GaAs content in front-ends. It will also address the GaAs opportunities in fiber transport applications and assess the GaAs foundry capabilities in this supply chain versus the pure-play RF GaAs foundries.

Seeking new opportunities for LEDs and lasers
This theme is sponsored by Inspectrology

Advanced technology of plasma dicing for GaAs VCSEL

Presented by Akihiro Itou, Panasonic

Vertical-cavity surface-emitting lasers (VCSELs) are now key optical sources in gigabit ethernet, high-speed optical-area networks, and computer links because of the advantages they offer, such as low threshold current and a small structure. During conventional blade dicing of VCSELs fabricated on gallium-arsenide (GaAs) substrates, GaAs wafers are fragile and chipping or edge cracks can easily occur. Hence, in the case of conventional saw processes, generally the kerf must be wider and the blade feed speed must be slower in order to avoid device damage due to chipping or edge cracks, which cause limitation of productivity. Plasma dicing has been proposed as a new wafer singulation method. The plasma dicing process is a technology to dice the entire wafer into chips at once [3]. As the wafer is processed using a chemical reaction by plasma, plasma dicing does not cause any physical damage to chips, regardless of the wafer thickness. Thus, the plasma dicing process eliminates chipping and cracks at the edge of chips. In addition, the number of chips which can be taken from one wafer are able to be increased by reducing kerf width, which is approximately the same as the opening width of photo resist during the lithography process before plasma dicing. In this report, we apply plasma dicing to VCSEL on GaAs substrate and demonstrate GaAs dicing, with no chipping at the edge of VCSELs or surface particles.

High Performance Arsenide/Phosphide (As/P) MOCVD Technology for Next-generation Photonics Applications

Presented by Mark McKee, Veeco

Awaiting presentation abstract.

Improving the architecture of the GaN VCSEL

Presented by Tatsushi Hamaguchi, Researching Team Leader, Sony Corp.

Awaiting presentation abstract.

Refining microLED technology

Presented by Wei Sin Tan, Plessey Semiconductors

This presentation will focus on Plessey’s pioneering proprietary approach to enable manufacturing of monolithic microLED arrays using gallium nitride (GaN)-on-silicon (Si) technologies to develop better optimised AR/MR and wearable displays applications. It describes the problems associated with incumbent micro-display technologies which are prohibiting the advancement of new innovative technologies which microLEDs can help solve.

Presentation title to be confirmed

Presented by Philip Greene, Ferrotec

Awaiting presentation abstract.

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Presented by Jens Voigt, AIXTRON

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Samuel Sonderegger, Attolight

Awaiting presentation abstract.

Ramping volumes in the power electronics sector
This theme is sponsored by ClassOne Technology

Delivering the best cost of ownership in PVD solutions for SiC Power applications

Presented by Silvan Wüthrich, Head of BU Semiconductor, Evatec

The Power Device industry is rapidly developing new SiC power products with best electrical performance, but this also requires new PVD system concepts with highly uniform coating thickness results and demanding run to run repeatability performance. As substrate costs play a significant role, proven system performance with high yield combined with high uptime / low maintenance time are essential to achieve the required CoO in production.

Driving the adoption of CoolGaN technology

Presented by Gerald Deboy, Infineon

With the commercial availability of GaN-based power devices, the positioning of the technology versus next best silicon or SiC-based alternatives is a hot topic in the industry. Reliability aspects and system benefits are key issues driving the adoption of the technology. We will discuss a number of use cases such as hyper-scale datacenter and high-density telecom power supplies to outline decision factors in favor of GaN-based solutions. We will compare performance indicators towards the next best alternatives. The talk addresses both power supply engineers as well as market analysts and trend scouts.

Driving the revolution in wide bandgap devices

Presented by John Palmour, CTO, Wolfspeed

Historically, silicon-based power semiconductors have served as the backbone of power systems, but wide bandgap (WBG) devices are changing this. As the market for these devices grow, it is important to understand what drives the commercial market to use WBG devices versus the more established Silicon technologies. WBG materials deliver results that aren’t possible with silicon in the areas of Power and RF. These improvements can have a significant impact in reducing overall electricity consumption worldwide, and in particular, SiC is enabling electric vehicles with longer range and lower cost. This adoption is driving a very rapid expansion for the SiC market and supply chain.

Expanding opportunities for 650 V GaN FETs

Presented by Frédéric Dupont, CEO, Exagan

GaN-on-Silicon is a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mm GaN-on-Silicon technology to accelerate GaN market adoption. G-FET™ & G-Drive™ product portfolio, provide extensive power range capabilities, as well as power switching solutions that combine the super-fast GaN-on-Silicon switch with its appropriate driver IC controlled by embedded diagnostics, protections and, much more functionalities. Those “easy to use” GaN solutions will help power innovators extending power conversion roadmaps, by creating smaller, more efficient and higher-performing power converters.

The SiC & GaN Power Semiconductor Market: Forecasts and Drivers

Presented by Richard Eden, IHS Markit

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present the likely key applications, pricing trends, the supplier landscape and the latest ten-year forecasts by application for both technologies. It will identify which technologies can compete with silicon in terms of device type and likely adoption by end applications. The SiC & GaN wafer substrate supply chain will also be discussed. Finally, I will try to answer the question: Are Cree/Wolfspeed's expansion plans (announced in May 2019) intended to monopolize the SiC market?

Using high speed XRDI to improve and monitor SiC substrate quality

Presented by Paul Ryan, Director, Product Management, Bruker

A major issue faced by the SiC industry is linked to the question of how to ramp up the production and meet the ever-growing demand of materials for the power electronics sector. In order to achieve this, the SiC wafer supply needs to develop a means to drive the cost of production down. One method of doing this is by improving yield. Silicon Carbide wafer growth and device manufacturing have improved significantly but the process yields are still too low due to the high densities of crystalline defects, particularly as substrate sizes increase, which are damaging the device performance and their long-term reliability. It is therefore critical to develop new metrology techniques that are capable of detecting these defects allowing to understand how they form and giving a means to reduce or eliminate them. We introduce high speed X-ray diffraction Imaging (XRDI, sometimes known as X-ray topography) as one of these techniques. It enables the non-destructive detection of the detrimental TSDs, TEDs, SFs and BPDs on all types of SiC wafers, including n+ doped substrates, without some of the limitations of existing etch and optical inspection methods. It is a viable candidate to replace destructive KOH etching in the long term as a defect metrology and reduce the cost of SiC wafers manufacturing. In this talk we will discuss the latest developments in XRDI which enable fully automated high throughput measurements at high resolution for integration into modern wafer production lines to enable direct feedback into the process development.

Presentation title to be confirmed

Presented by Shivani Iyer, Nanotronics

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Rob Rhoades, Revasum

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Cem Basceri, Qromis

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Gerald Klug, DISCO HI-TEC EUROPE

Awaiting presentation abstract.

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Presented by Iris Claussen, Laytec

Awaiting presentation abstract.

Enhancing the automobile
This theme is sponsored by ClassOne Technology

High-power blue VCSELs and VCSEL arrays

Presented by Masaru Kuramoto, Executive Chief Researcher, Stanley Electric

Blue vertical-cavity surface-emitting lasers (VCSELs) are strongly desired for many applications, including adaptive laser headlamps, retinal scanning displays, visible light communication systems, and processing of metals such as copper and gold. For many applications, high output powers and low-divergence output beams are preferred because they allow high efficiency fiber coupling and high optical density to be realized with very simple optics. This presentation will focus on recent progress in high power and mode control technologies of blue VCSELs and VCSEL arrays.

Presentation title to be confirmed

Presented by John Ghekiere, ClassOne

Awaiting presentation abstract.

Taking wide bandgap devices to their ultimate limits
This theme is sponsored by Precision Febricators

Ramping production of gallium oxide diodes and transistors

Presented by Toshimi Hitora, President, FLOSFIA

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Marianne Germain, Chief Executive Officer, EpiGaN

Awaiting presentation abstract.

Theme to be confirmed

Presentation title to be confirmed

Presented by Ke Xu, Nanowin

Awaiting presentation abstract.

Presentation title to be confirmed

Presented by Mukundkrishna Raghunathan, KLA Corporation

Awaiting presentation abstract.


BOOK YOUR PLACE FOR 2020 - 3 Events, 2 Days, 1 Ticket

Book your delegate place early, it will be another sell-out!