Presentations at CS International 2026 are grouped into 5 key themes which collectively provide complete coverage of the compound semiconductor industry.
If you are interested in speaking at CS International 2026, please contact info@cs-international.net or call +44 (0)24 7671 8970.
Over the past decade, imec has been supporting the power semiconductor industry with the enablement of GaN technologies offering a comprehensive industrial affiliation program to mutualize R&D efforts and licensing the intellectual property generated within and outside its partner consortium. These efforts spent on 200mm from the start resulted in the availability of 200V/650V and 40V/100V p-GaN HEMT technology platforms soon complemented with their monolithic integration derivatives based on Resistor Transistor Logic and built on Silicon or SOI with Deep Trench Isolation to all GaN Power Integrated Circuits to be designed. The ongoing Artificial Intelligence revolution is reshaping data centers and compute system architectures. New power semiconductor technologies are needed to manage the increased power fueling this new era. In this context, imec is expanding its portfolio of GaN power technologies towards lower and higher voltage ratings to address the overall power conversion chain as well as moving to 300mm to aggressively scale device dimensions and benefits from the most advanced processing tool capabilities.
Analysis of a GaN device with state-of-the-art preparation using noble ions to minimize damage, enabling accurate epi-layer characterization in (S)TEM. A lamella containing the AlGaN/GaN stack was prepared with both xenon and argon plasma ions while subsequent analysis in (S)TEM enabled atomic-scale chemical mapping, lattice-resolved interface imaging, and strain and grain orientation analysis.
X-ray diffraction methods are a very important non-destructive tool in analysis of thin films and bulk crystals alike. The ability to very accurately measure lattice d-spacings in a variety of geometries provides structural information, not only about lattice parameters, phase identification and crystal orientations, but also about different metrics of crystal and film quality. For thin films, obtainable parameters include composition and relaxation, micro-strain, stress, mosaicity, lateral and vertical correlation lengths and crystallite size, microscopic tilts and twists, dislocation density, as well as layer thickness, roughness / diffuseness, and density. For bulk crystals, X-ray diffraction can be used to determine crystal quality via rocking curves, and crystal orientation, for example the offcut magnitude and direction. In this work we present the capabilities of a few different laboratory diffractometers. We demonstrate several ways in which Reciprocal Space Mapping (RSM) can be performed, such as coplanar Ultrafast RSM using area detector or non-coplanar RSMs from fiber textured films. We compare several in-plane geometries on Empyrean and on X’Pert3 MRD (XL). We demonstrate the benefits of using a rotating slit in combination with an X-ray lens for consistent sample illumination at any Chi tilts, improving the quality of texture, non-coplanar RSM, and in-plane measurements. Next, we focus on the ability to make the analysis of X-ray reflectivity less model-dependent, by using our patented free-form analysis method. This can be especially in research process in cases when the layer model is difficult to build - either because of oxidation, interlayer formation, density gradients, or any other processes that would need to be explicitly known in advance to be included in a model. Finally, we present work on the rapid orientation determination of bulk crystals (wafers).
The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for the mass production and fabrication of high-frequency and high-power devices relies on metalorganic chemical vapor deposition (MOCVD) using metal-organic molecules, also called precursors. While this growth method ensures high productivity and low operation costs compared to other methods, its most significant disadvantage lies in the presence of carbon atoms in the precursors, which are unavoidably incorporated into the epitaxial layers and hamper the performance of most types of fabricated devices. Carbon-free precursors for the CVD process could enhance the performance of high-frequency and high-power nitride-based devices while maintaining growth capability in industrial equipment. In this work, we implement gallium- and aluminum-brominated precursors, which contain no carbon atoms, to grow GaN and AlN layers in an industrial CVD system. We compare the results of this alternative CVD process with the conventional method using trimethyl precursors through several characterization techniques, indicating a clear reduction in optically active carbon related defects.
This presentation highlights VisIC Technologies’ latest D3GaN technology, integrated into power modules for inverters driving electric motors in battery electric vehicles. Dyno tests achieved over 130 kW, surpassing SiC performance with the same e-machine. We will present WLTP efficiency results, switching loss data, and insights on implementing lateral GaN in real-world power modules. The talk also addresses key system-level design considerations and limitations when using lateral versus vertical devices.
After establishing a strong foothold in consumer and mobile power, most notably fast chargers, GaN is now progressing into applications where scale, reliability, and system efficiency are critical. The global GaN power market is expected to approach $3 billion by 2030, reflecting this shift from volume-driven adoption to platform-level integration. The next phase of growth is being shaped by datacenters and electrified transportation. In AI datacenters, NVIDIA’s engagement with wide band-gap device suppliers highlights GaN’s role in enabling higher-efficiency power delivery, particularly in 800 VDC architectures designed to reduce losses and improve rack-level power density. At the same time, the automotive sector is adopting GaN for both onboard and off-board charging, driven by efficiency, bidirectionality, and compactness requirements. These market dynamics are reshaping the GaN ecosystem itself. As adoption moves toward high-volume, the industry is seeing deeper vertical integration, and the arrival of established power semiconductor players such as onsemi. Their entry reflects a shift in OEM expectations: from discrete performance advantages to long-term efficiency. Together, these trends mark GaN’s evolution from a specialist technology into a strategic pillar of the power semiconductor industry, supported by a broader, more mature, and increasingly diversified supplier base.
This presentation will focus on the realization of vertical GaN power devices grown on foreign substrates by employing temporary wafer bonding for mechanical support during substrate thinning and backside etching, complemented by metal bonding for heat sink and drain contact integration. Multiple device architectures, comprehensive process flows, and experimental results will be presented and analyzed.
Atomera is commercializing a proprietary epitaxial technology, known as MST® (Mears Silicon Technology™), across a broad technology space, from power and analog electronics, through RF devices to the most advanced gate-all-around (GAA) logic applications. Experiments conducted with Texas State University (Prof. E. Piner) and Sandia National Laboratories, where a thin layer of MST is deposited on Si (111) substrates prior to process-of-record GaN epitaxy, have demonstrated higher crystal quality of the GaN stack and improved electrical characteristics in fabricated GaN devices. Further development and commercialization efforts are underway.
Awaiting presentation abstract.
The sustained human presence on the Moon will require a highly available and reliable power system comparable to modern terrestrial utility grids. This system must provide effective fault isolation, autonomous protection, and coordinated operation across multiple distributed sources and loads. These elements will be separated by distances ranging from hundreds of meters to several kilometers, and under these conditions low voltage distribution is not viable. Transmission losses become too high, and the required cabling mass is incompatible with launch constraints. In addition, the power infrastructure must achieve exceptional reliability and rely on radiation tolerant components. Radiation hardened high voltage GaN technology is currently the only practical solution capable of closing this technological gap and enabling the power system architectures required for long term human operations on the lunar surface and beyond.
As RF GaN HEMTs advance toward higher frequency and power density, both material quality and reliability are becoming critical. This presentation introduces TES’s Tunable Epi System and discusses how fast gas switching and flow control enable high-quality AlN buffers, abrupt interfaces, and uniform GaN/AlGaN epitaxy to support scalable RF GaN production.
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Modern monocrystal applications across semiconductor, aerospace, life-science, and consumer sectors depend on materials with consistent structure, minimal defects, and reliable performance. This presentation outlines broad developments in scalable growth methodologies and quality-focused production practices that support more uniform substrates, improved end-use reliability, and a stronger European footprint in the global monocrystal landscape.
Shrinking margins in SiC manufacturing demand unprecedented control over material quality and process stability. This presentation examines how advanced analytical and metrology techniques enable early defect detection, process consistency and yield improvement across SiC substrates and epitaxial layers. Attendees will gain insight into how precision measurement drives improved reliability and competitive advantage in SiC device production.
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Silicon carbide (SiC) has emerged as a key wide-bandgap semiconductor for next-generation power electronics, driven by increasing demand for high-efficiency, high-voltage, and high-temperature operation in applications such as electric vehicles, renewable energy systems, and industrial power conversion. To address the need for scalable and manufacturing-ready advanced SiC technologies, the Institute of Microelectronics (IME), A*STAR, Singapore, has established a 200-mm open-innovation SiC pilot line. This talk provides an overview of advanced SiC technology platforms developed recently. The pilot line offers an integrated and flexible environment for the co-development and evaluation of next-generation SiC power device technologies, materials, and processes with emphasis on wafer-level uniformity, cost efficiency, and manufacturability. Besides high-quality fabrication, our pilot line enables rapid learning cycles for partners. Key technology modules spanning from SiC epitaxial growth, high resolution lithography, ion implantation, advanced trench processing, gate dielectric engineering including high-K, Ohmic contact formation, and full device integration, alongside ongoing progress in backend integration and power module packaging will be introduced in the talk.
In the compound semiconductor industry, a wide variety of materials is used to manufacture different devices such as LEDs, sensors, and imagers. Because these materials are uncommon compared to silicon, their processing requires different technologies and process steps. In this environment, any loss in yield has a significant negative impact on production efficiency and cost. One critical process step is wafer dicing, which is known to be very contaminating and can strongly reduce yield due to particle generation and surface contamination. An effective post-dicing cleaning process is therefore essential to recover and improve yield. SicOzone™ enables an efficient post-dicing cleaning step that improves wafer cleanliness and supports higher overall yield.
SiC based power semiconductors are meanwhile established elements in the library of engineers designing power conversion circuits. Beyond the classical range of applications, the features delivered by the state of the are solid state components open up new areas for the utilization of semiconductor-based elements. Prominent examples are circuit breakers especially for DC based networks and solid-state transformers which eventually leave their status of being just an academic passion. This is mostly driven by the fact that the whole network of electrical energy is facing a transition from simple unidirectional flows towards intelligent multidirectional energy flows and the growing trend of using more efficient DC networks. Especially the new architectures of high-performance (AI) data center power supplies will drive this transformation. In this field, due to the outstanding features of the new components also a leapfrog in system performance is enabled. Key benefits like loss and material saving as well as replacement of outdated electromechanical solutions are just a few examples. Finally, the importance of suitable package technologies for the success of wide band gap power devices will be highlighted.
Thermal processing plays a critical role in achieving uniformity, defect reduction and performance stability in SiC production. This presentation explores advanced furnace technologies and process optimisation strategies that support consistent substrate and epitaxial quality. The session highlights how controlled thermal environments enable higher throughput, reduced variability and enhanced device reliability for next-generation SiC power electronics.
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As SiC manufacturing scales to 200 mm wafers, yield is increasingly limited by surface contamination, crystalline quality, and thin-film uniformity. This talk presents an integrated approach using inline and offline TXRF, HRXRD, and XRR to quantify metal contamination, strain, defects, and film properties, enabling predictive process control and prevention of yield excursions across SiC fabs.
In this presentation, we introduce novel strain-compensated AlGaN/InGaN DBRs for GaN-based VCSELs. By adopting an asymmetric structure in which the InGaN layer is thicker than λ/4 and the AlGaN layer is thinner than λ/4, and by compensating for strain, we achieved a larger refractive index contrast compared to conventional λ/4 structures. Through a high growth rate of 1–several µm/h and minimizing growth interruption, we successfully fabricated DBRs with over 99.9% reflectivity in approximately 5 hours. With further optimization, this technology has the potential to reduce growth time to 2–3 hours, comparable to GaAs-based DBRs, and could significantly lower the manufacturing cost of GaN VCSEL wafers.
Barium titanate (BaTiO₃, BTO) is rapidly transitioning from an emerging research material to a leading platform for high performance electro optic modulators. Breakthrough results from 2024–2026 demonstrate that BTO can outperform silicon, lithium niobate, polymers, and other photonic materials in speed, power efficiency, and device density—key metrics for next generation communications and computing. Its strong Pockels response and compatibility with integrated photonics position BTO as a compelling candidate for commercial deployment. DCA Instruments has accelerated this trajectory by delivering the first 12″ (300 mm) BTO wafer production systems with full foundry compatibility, enabling scalable manufacturing for advanced photonic devices.
Vertical-cavity surface-emitting lasers (VCSELs) emitting in the 800 – 1100 nm range play a significant role in short-reach data communication as well as 3D sensing applications. High-volume VCSEL production on 150-mm (6-inch) diameter substrates is becoming standard and work has begun on transitioning to 200-mm (8-inch) production. Here we discuss the relative advantages of GaAs and Ge large area substrates, the reduction in substrate thickness that can be achieved using Ge and the latest results for high speed generic VCSEL designs.
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Compound semiconductor optoelectronics underpin a wide range of modern technologies, yet further progress increasingly depends on manufacturable device architectures. In this talk, we introduce a novel electrochemical approach for engineering the refractive index of compound semiconductors, enabling device structures that are difficult to realize using conventional epitaxial or dielectric methods. As a representative example, we demonstrate manufacturable InP-based short-wave infrared (SWIR) vertical-cavity surface-emitting lasers (VCSELs) using nanoporous semiconductor structures. This platform provides precise index control, robust optical confinement, and wafer-scale scalability. Efficient continuous-wave operation with power conversion efficiency up to 30% is achieved, together with excellent reliability and reproducibility. Potential applications in SWIR sensing, digital health, and emerging optical interconnects are discussed.
Silicon-Carbide became the most important compound semiconductor material in the world, helping electrifying everybody's daily life. After material suppliers improved 6" crystal growth processes for a long time, the transition from 6" to 8" was performed within just a few years, while already being passed by by new applications demanding more and cheaper wafers and downstream processes, which are only able to be served with 12" wafers. Lapmaster Wolters launched its AC 1500 SiC double-side polisher, capable of polishing 8" and 12" wafers, already in 2023, providing a reliable and future-proof application base for everything that’s lays beyond 8"! This talk covers detailed insights on advanced material processing enabling high-quality and Cost of Ownership improved wafer manufacturing.
Beta-phase gallium oxide (β-Ga₂O₃) has emerged as a competitive ultra-wide bandgap (UWBG) semiconductor for next-generation RF electronics, leveraging its exceptional material properties—including an ultra-large bandgap (4.7–4.9 eV), high theoretical breakdown field (8 MV/cm), and electron saturation velocity (2×107 cm/s). Crucially, its unique capability for low-cost melt-growth of bulk substrates enables high-quality, large-scale wafer production, overcoming economic barriers faced by other UWBG materials. It is generally accepted that the low electron mobility and extremely low thermal conductivity are major obstacles towards realizing high performance β-Ga₂O₃-based RF power FETs. This presentation highlights our group’s recent breakthroughs in advancing β-Ga₂O₃-based RF power devices and technologies. Here we report heterogenous integration of single-crystal gallium oxide thin film onto high thermal conductivity substrate and explore the great promise of β-Ga₂O₃ for future high-voltage, high-power and low-noise RF electronics.
Awaiting presentation abstract.
Semiconductor-based power electronics is a key technology for solving the greatest challenge facing society - sustainable energy generation. This challenge is to be tackled by developing modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures with high electron mobility for highly efficient power transistors. In Ga2O3 in particular, this approach to increase the charge carrier mobility promises a high innovation potential, as it was also theoretically predicted that the significantly limiting scattering process on polar-optical phonons would be screened. If this scattering process is suppressed, a similar charge carrier mobility is expected in Ga2O3 as in silicon, as the effective electron mass is similar. Effective screening of polar-optical phonons only occurs at a carrier density in the two-dimensional electron gas (2DEG) around 1013 cm-2, which requires a conduction band discontinuity of at least 1 eV. Theoretical predictions show that this requires an aluminum content of at least 50% (x ≥ 0.5) in the barrier. This structure has not yet been realized and is to be developed for the first time in the All-GO-HEMT project. The requirements for high crystalline perfection, a homogeneous layer thickness and smooth interface with a high Al content and delta doping over the entire substrate size of up to 2 inches must be met to provide a material basis for more efficient power electronics.
Awaiting presentation abstract.
