Now in production across several application markets, high voltage GaN has piqued the interest of hybrid and electric vehicle manufacturers. The technology’s proven ability to increase power density within various topologies as well as its attractive cost model have positioned GaN to reportedly cannibalize the on-board charger market currently attributed to SiC. The key to realizing this projection is the technology’s reliablity. Learn about the importance of extended validation tests, GaN’s current FIT rates and temperature ratings, and how a deep focus on reliability enables volume production from Transphorm—manufacturer of the industry’s first AEC-Q101 GaN FET.
Philip leads Transphorm’s global marketing and North American sales strategies driving adoption of high voltage GaN power transistors. He previously worked for Vishay (Siliconix), heading up its high voltage superjunction technology division. He also held positions with Fairchild Semiconductor, Medallion Instrumentation Systems, and Microsemi PPG where he oversaw high voltage MOSFET, FRED diodes, IGBTs, and SiC marketing efforts. Philip’s holds a M.B.A. (Hons) from I.H. Asper School of Business, University of Manitoba; a B.S. in Electrical Engineering, University of Manitoba; and an Electronic Engineering Technology Associate Degree, Red River College. He also holds two U.S. patents, a trade secret, and has authored many technical and application papers.