A novel, high-throughput method for analyzing crystalline defects in GaN semiconductors using Electron Channeling Contrast Imaging (ECCI). Learn how this semi-automated analysis, enhanced by AI, can efficiently visualize and quantify threading dislocations, improving device yield and performance in compound semiconductor devices.
Antonio Mani is a key account technologist and Business Development Manager who drives strategic planning and execution of partnership programs with research institutes and industrial entities. With a background in Materials Science and Physics Engineering, Antonio has over 20 years of experience in roles such as application development engineering and R&D technical program management. Antonio's expertise includes Physical and Electrical Fault Analysis, and the industrial deployment of methods for defect detection and binning in GaN on Silicon and SiC based manufacturing processes.