PRESENTATION
Connected Metrology for Growth and Characterization of InP and GaAs Laser Structures – from Epi to Etch
The production of InP and GaAs based laser and VCSEL structures requires tight process control during front end production. In-situ metrology during epi for process control is established and mandatory but not sufficient. Post-epi wafer mapping with photoluminescence and white light reflectance complements the in-situ metrology and allows for a much deeper analysis of the structures. Therefore, results from EpiX, LayTec’s best in class wafer mapper, in combination with analysis of in-situ data will be presented. Also, it will be demonstrated how metrology is employed further downstream during plasma etching of the epi wafers highlighting the high value of connected metrology along the manufacturing chain.
Iris Claussen
LayTec
Dr. Iris Claussen graduated from Göttingen University with a PhD in Physics in 2010, focusing on solid state physics and materials science. She has been active in worldwide sales of scientific equipment for surface analysis and deposition systems for almost fifteen years. In 2019, she joined LayTec as key account manager and sales manager for in-situ measurement systems in the European territory.