The GaN HEMT has established itself as the dominant high-power semiconductor device technology through 40 GHz. Commercially available GaN devices, however, are still limited with regard to their supply voltage, with 50 V or 65 V usually being the limit. Additionally, when going up in the spectrum, devices tend to be rated for increasingly lower voltages. At Fraunhofer IAF we have developed a capable 100 V GaN technology with proven performance through L band (1 GHz – 2 GHz). However, there is also a strong need for very-high-power devices at higher frequency bands, e.g., in C band and X band. For that reason, we set out to extend the applicable frequency range of our devices without giving up on the elevated supply voltage. The outcome of these endeavours yields efficiency numbers comparable to those achieved by state-of-the-art 40 V and 50 V technologies, while substantially stepping up in power density and gain.
Sebastian Krause joined Fraunhofer Institute for Applied Solid State Physics IAF in 2015. He is involved in the GaN technology development and device design for frequencies up to > 200 GHz. In particular, he is responsible for the conception and development of IAF’s 100-V GaN technology. Sebastian received his M.Sc. degree in “Micro and Nanoelectronics” from Karlsruhe Institute of Technology in 2015.