PRESENTATION

Bruker X-ray solutions for GaN power device metrology

GaN is used in power devices due to high breakthrough strength, fast switching speed, and high thermal conductivity. Production monitoring is key. Buffer layer quality is critical to growing high quality devices, affecting breakdown voltage, device lifetime, operating frequency, etc. Device layer thickness and composition are critical to electrical properties. Bruker’s R&D and production-dedicated systems are designed to monitor the quality of the substrate and epilayers with high productivity and fast feedback. Using non-destructive techniques such as HRXRD, XRR and XRDI on wafers up to 300mm, the substrate and epilayer quality, composition and thickness as well as crystalline defects can be monitored with high repeatability, high resolution, high throughput, full automation, and easy-to-use software.

Qian Zheng

Bruker

Qian Zheng is an Application Scientist and Product Marketing Manager in the Bruker semiconductor X-ray business unit. She is responsible for demo measurements, applications support, marketing and customer support across a range of X-ray metrology products. Qian Zheng has a PhD in materials Physics from the Autonomous University of Madrid. With over 10 years’ experience in semiconductor materials, she has been engaged in research and development of crystal growth, device fabrication and materials characterisation.