Fueled by global mega trends, compound semiconductors have reported substantial design wins in current and future volume market applications, among which power electronics is on the verge of a major shift from Silicon to SiC and GaN. In this regards, SiC semiconductors have gained an increased acceptance for automotive application during the last year, while GaN has already started penetrating consumer level applications. For becoming a sustainable and dominating solution in power electronics, both performance, reliability and cost requirements will need to be met at device level, but also at epitaxy level. Here we report on latest advances of epitaxy batch production technology for power electronics wide bandgap material including the newly launched AIX G5 WW C, which is a fully automated SiC 8x150 mm batch solution providing best throughput and lowest cost per wafer. At the same time individual wafer control ensures layer quality showing excellent uniformities and defects levels, so that customers’ performance and cost metrics are met as well as a fast ramp-up in the current dynamic environment is enabled.
Dr. Jens Voigt is Director Product Management in AIXTRON SE. He is responsible for the product strategy of AIXTRON’s compound semiconductor deposition equipment portfolio. He received his PhD in Physics from the University of Kassel, Germany, in the field of Micro Electro-Mechanical Systems. He joined AIXTRON in year 2001 as a Process Scientist, focusing on GaN MOCVD for LED applications. He has held different appointments in sales and service functions and is now in charge of Marketing, Sales and After Sales Strategy.