Silicon carbide is not just another semiconductor, it is a true game changer in the world of power electronics. Its superior physical properties have made it the replacement for silicon, and its potential is now being fully realized. What makes silicon carbide so exceptional is its ability to handle high voltages and temperatures, making it the perfect solution for high-power applications. Silicon carbide devices offer a reliable solution for achieving the highest efficiency conversion systems, which makes them a vital investment for future generations and a key player in the next era of power electronics.
Leading the development of silicon and superjunction technologies in ST since 1998, Mario's work has significantly contributed to the revolution of high-voltage power devices. One of the first pioneers of SiC research for power electronics in 1997, today Mario is the Design Director of Silicon Carbide (SiC) devices in STMicroelectronics and the Head of the SiC technology and product development. With more than 25 years of research and development at ST, Mario has registered 64 patents and authored or coauthored 66 papers for international journals and conferences. For his many achievements, Mario has been appointed ST Company Fellow - the highest honor a technologist can receive at Company level - in March 2023.