PRESENTATION

Expanding the Ultra-Wide Bandgap Portfolio with Transition Metal Nitrides: AlScN and AlYN

This presentation explores the epitaxial growth and application of AlScN and AlYN in electronic devices. High-quality AlScN and AlYN layers were grown by MOCVD, revealing benefits such as higher sheet carrier density and lattice-matched growth to GaN for improved transistor reliability. The structural and electrical properties of these layers were analyzed, and progress in HEMT performance, achieving output power beyond 8 W/mm at 30 GHz, will be discussed. Additionally, the ferroelectric properties of AlScN and AlYN layers will be compared to sputtered layers, highlighting the measured coercive field of 5.5 MV cm-1 for AlScN and challenges with AlYN.