PRESENTATION

Expanding the Ultra-Wide Bandgap Portfolio with Transition Metal Nitrides: AlScN and AlYN

This presentation explores the epitaxial growth and application of AlScN and AlYN in electronic devices. High-quality AlScN and AlYN layers were grown by MOCVD, revealing benefits such as higher sheet carrier density and lattice-matched growth to GaN for improved transistor reliability. The structural and electrical properties of these layers were analyzed, and progress in HEMT performance, achieving output power beyond 8 W/mm at 30 GHz, will be discussed. Additionally, the ferroelectric properties of AlScN and AlYN layers will be compared to sputtered layers, highlighting the measured coercive field of 5.5 MV cm-1 for AlScN and challenges with AlYN.

Stefano Leone

Fraunhofer Institute IAF

Dr. Leone Stefano, born in Catania, Italy, in 1978, received his B.Sc. and M.Sc. degrees in industrial chemistry from the University of Catania and his Ph.D. in semiconductor materials from Linköping University, Sweden, in 2010. With over 20 years of experience in the epitaxial growth of wide band-gap semiconductors, he specializes in the epitaxy of SiC and nitrides, including AlScN and AlYN. Dr. Leone has worked with prominent companies like LPE and Aixtron SE, and currently leads the nitride epitaxy group at the Fraunhofer Institute for Applied Solid State Physics (IAF). He has published over 100 scientific papers and holds several patents.