High voltage GaN power devices continue to evolve, reaching toward higher power ranges supported by SiC solutions. This presentation introduces the industry’s first viable 1200V GaN HEMT switches with fast-switching and low-loss for applications using 3-phase and 750 VDC or higher, such as EV drives, EV charging, PV inverters, and general industrial PSUs. The 70 milliohm HEMT uses GaN-on-Sapphire to achieve the high breakdown voltage required for 1200V and streamlined, low cost wafer manufacturing when compared to alternatives like GaN-on-Bulk GaN or QST type substrates research approaches. Attendees will gain insight into the 1200V switch’s architecture and performance, which shows excellent 900:450V buck converter efficiency of >99% at 50kHz.
Dr. Gupta is a Member of Technical Staff at Transphorm where he works in the CTO team to develop next generation GaN power electronics devices. Dr. Gupta has served as PI on multiple government contracts including ARPA-E and DARPA. He is a device expert with more than 5 years’ experience in GaN device design and characterization for power electronics and other applications. Prior to joining Transphorm, he obtained his Ph.D. in Electrical and Computer Engineering from the University of California Santa Barbara in 2015 and BTech in Electrical Engineering from Indian Institute of Technology Kanpur in 2010.