PRESENTATION

Perfecting GaN VCSEL Production Process

We demonstrated over 20% wall-plug efficiency (WPE) of GaN VCSELs emitting at 420 nm wavelength. Such a high performance is achieved by the following three key technologies we have developed, 1) high-quality semiconductor-based (AlInN/GaN) distributed Bragg reflectors (DBR), 2) simple nano-height mesa for lateral optical/current confinements, and 3) in situ cavity length control with in situ reflectivity spectra measurement. Towards even higher WPE, we plan to include our additional technologies into the VCSELs, 4) low resistive tunnel junctions for p-contact and 5) highly conductive AlInN/GaN DBR for n-contact. In this talk, we show these technologies and update our VCSEL performances.