GaN is projected to be a $1b market by 2030 and is a critical enabling technology in some very high growth markets like automated vehicles and datacentres. There are two routes to achieving more efficient, higher operating temperature, smaller, lighter and lower cost power semiconductors – pGaN HEMTs and also GaN MISHEMTs. In his presentation, Frazer will focus on atomic layer processing solutions to create both of these next-generation GaN Power devices. He will discuss the newest developments for our atomic layer deposition low damage, high-quality dielectrics and passivation layers, and share our technology solutions for accurate, controlled atomic layer etch for pGaN HEMTs and GaN MISHEMTs.
Frazer Anderson has worked for Oxford Instruments for 23 years and is currently the Chief Technology Officer. During his 36 year career in the design and manufacture of capital equipment for the semiconductor industry, Frazer has worked in a number of functions including manufacturing, engineering and Product Management. He has led a number of acquisition projects, and has been instrumental in forming a number of long term global collaborative partnerships. Frazer is also involved in several UK government led Compound Semiconductor and Graphene Special Interest Groups (SIGs) and is very active in promoting OIPTs involvement in the UK’s Centres for Doctoral Training, being a member of a number of Strategic Advisory Boards.