Large scale monolithic integration of Gallium Nitride (GaN) transistors as well as heterogenous integration of GaN devices with other emerging materials are of increasing interest because of their potential applications in harsh environment electronics, power electronics, RF, space electronics and avionics. One of the major bottlenecks, to realize this dream is the non-existence of a high-performance p-channel GaN device. This talk will focus on the potential integration technology of GaN and its opportunities and challenges. In particular, the presentation will highlight the progress made in the design and realization of a high-performance GaN p-FET over the last couple of years.
Dr Teo worked at Nortel Networks for about 15 years where main R&D thrusts were in 3G and 4G Wireless Communication Systems and Mesh Networks. Currently working at Mitsubishi Electric Research Labs (MERL), Cambridge, MA, USA. He is one of the main authors of ANSI C63.17 for the unlicensed bands and a contributor to WiMAX and LTE standards in the PHY and MAC layers. He is author and co-author of over 150 reviewed journal and conference papers and three chapter books. In addition, he is also an inventor and co-inventor of over 200 granted patents and patent applications which span across areas that include Nano and Surface Physics, Superconductor, Thermal Physics, Semiconductor Power Devices, Metamaterial, Wireless Communications, Cognitive Radio, Game Theory, RF and Power Electronics, Battery Charging and Wireless Power Transfer, GaN technology, and motor technology. Currently he is working as a strategy project leader at MERL.