PRESENTATION

Enabling Next Generation GaN-based Devices Using Advanced Single-Wafer MOCVD Technology

Gallium Nitride-based devices are making rapid progress in the market for power electronics due to their superior performance and conversion efficiency. Power devices based on GaN have been adopted in fast chargers for mobile devices and are seeing increasing adoption in power supplies for consumer electronics, data centers, communication infrastructure and electric vehicles. Critical in the manufacturing of GaN Power devices is the MOCVD technology for epitaxial deposition of Gallium Nitride and related films. This technology must deliver on the industry’s stringent performance requirements of thickness, composition, doping uniformity, and low defectivity while reducing costs via high throughput, yield, and low operating expenses. A large operating process space (in terms of pressure, temperature, and growth rates) is needed for optimization of device stacks, with excellent boundary layer control over the full process range. To support the industry’s transition to 200mm Silicon substrates for next generation devices and the roadmap to 300mm Silicon substrates, Veeco has made single wafer reactor technology accessible for 200mm and 300mm substrates with the Propel HVM® and Propel 300® systems, respectively. This advanced single-wafer MOCVD capability will be discussed in this presentation.