The world's need for power electronics continues to grow, and GaN will have its place in the power ecosystem. Vertical device architectures enable the highest powers in Si and SiC and the same is true in GaN. True vertical devices must be grown on bulk GaN, which also yields the highest quality material and better device reliability. GaN is much lower cost when thick drift regions are grown with faster growth rates and chemically pure precursors afforded by Hydride Vapor Phase Epitaxy (HVPE). Kyma’s HVPE technology is being utilized for thick, lightly doped drift regions for nascent vertical power device manufacturers.
Dr. Heather Splawn is the President & CEO of Kyma Technologies and has been with the company for over 12 years. She leads Kyma’s strategic vision and overall direction while directing daily operations, including management of government and commercial contracts and partnerships as well as an international sales network. Heather co-founded The DoughMan, a gastro-athletic event benefiting local charities in Durham, North Carolina USA, obtained intern experience at Intel, and received her PhD in Electrical Engineering from Duke University.