PRESENTATION

High throughput MOCVD Solutions for Compounds Semiconductors

Data demand and Automotive electrification continue to drive adoption of WBG and all forecasts are very enthusiast about further penetration of SiC and GaN into Silicon incumbent power markets . Power Supplies and power inverter leads the demand volume together with Data Servers. To sustain the current adoption acceleration , critical check points must be met in regards to material performance, cost and availability. We will present how AIXTRON is addressing those with dedicated SiC and GaN high throughput Epitaxy solutions, including scaling to 200 and 300mm and how these contribute to maximize wafer production in customer existing factories

Nicolas Muesgens

Aixtron

Nicolas is responsible for GaN Power & RF market and the development of related deposition equipment. Over 10 years spent with AIXTRON, including several positions with Process development, Project Management and Service, and has overall, more than 10 years of experience in MOCVD technology in Germany and China. Attained Phd in Physics from RWTH Aachen University, Aachen, Germany.