PRESENTATION

A novel GaN sputter solution for wide band gap (WBG) applications

Equipment manufacturers need to deliver new generations of thin film deposition systems with flexibility to address future requirements of GaN HEMT manufacturing process and reduce overall production costs. Having a solid understanding of the material performance requirements, whether intended as a diffusion barrier, an ohmic contact or a Schottky barrier, is essential. This then provides the basis to configure production solutions delivering the specific electrical, mechanical, and structural properties needed for each particular layer in the GaN HEMT manufacturing process. Suitable combinations of process technologies can then be integrated into a single cluster platform for best production efficiency. Processes already characterized and tested thoroughly by the equipment manufacturer before final delivery ensures rapid start up and entry into production.