Porous semiconducting nitrides are effectively a new class of semiconducting material for use in devices such as light-emitting diodes. Porosity provides new opportunities to engineer properties including refractive index, and thermal and electrical conductivity. Sub-surface porous gallium nitride (GaN) is conventionally created by forming deep trenches using a dry-etching process. Porotech has developed a novel alternative etching process that can be mass-produced for commercial applications. This enables the creation of a variety of sub-surface porous architectures on top of which a range of devices may be grown, from light-emitting diodes to single photon sources – and now native red InGaN microLEDs.
Dr Ellie Galanis is the Business Development Manager for Porotech and a former materials scientist. Ellie spent a total of 7 years on the research and development of a range of novel materials targeting and delivering on specific industrial demands. She has since transitioned into more customer-facing roles within materials-based spin-outs and start-ups in the semiconductor industry, undertaking business development and product manager roles and leading international sales teams.