PRESENTATION

Electric Field Engineering to Unlock the Potential of Gallium Oxide Power Devices

Gallium oxide is an ultra-wide bandgap semiconductor with the potential to enable efficient power electronic devices beyond the wide bandgap revolution. However, the high breakdown electric field that enables the potential benefits brings its own challenges in device engineering to realize these benefits. By engineering the electric fields with novel high-κ heterojunctions as well as reduced surface field and edge termination structures, we show how to unlock the high breakdown field of gallium oxide to realize the efficient power devices of the future.

Nolan Hendricks

AFRL (Air Force Research Laboratory)

Nolan Hendricks is a device research engineer with Air Force Research Laboratory’s Sensors Directorate (AFRL/RY), where he began as an undergraduate researcher in 2017. He holds a PhD in materials science from UC Santa Barbara, where he completed his studies as a SMART fellow with AFRL. His research is focused on solutions for next generation wide and ultra-wide bandgap devices for power and RF electronics applications.