Expected market size growth especially of SiC-on-SiC based devices (key driver: automotive, e-mobility) and of GaN-on-SiC devices (key driver: 5G) placed several new challenges for improving the related MOCVD processes in yield, cost reduction and performance. In our contribution we focus on the newly developed capabilities of in-situ metrology for SiC-on-SiC structures (6” SiC wafer temperature sensing and wafer bow control) as grown in AIXTRON’s planetary warm-wall reactors. We further report on latest progress in multi-wavelength growth-rate control and improved absolute wafer temperature calibration for GaN-on-SiC MOCVD as well as on a latest break-through for GaN-on-Si wafer temperature sensing.
Dr. Iris Claussen graduated from Göttingen University with a PhD in Physics in 2010, focusing on solid state physics and materials science. She has been active in worldwide sales of scientific equipment for surface analysis and deposition systems for almost ten years. In 2019, she joined LayTec as key account manager and sales manager for in-situ measurement systems in the European territory.