PRESENTATION

High Voltage Power Technology with Gallium Oxide and AlGaN

Ultrawide bandgap semiconductors, such as Gallium Oxide (Ga2O3) and Aluminum Gallium Nitride (AlGaN), with their high breakdown voltage offer new opportunities for power electronics though the challenge often exists that doping as well as making good ohmic contacts become increasingly challenging the larger the bandgap. Latest results will be presented including reliable 4kV Gallium oxide diodes; we also discuss are there opportunities to develop this Ga2O3 power electronics technology on substrates other than bulk Ga2O3 substrates, to further accelerate scalability. Results on AlGaN and how to achieve good ohmic contacts and first device demonstrations will also be highlighted.

Martin Kuball

University of Bristol

Professor Kuball is Royal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK; he is Director of the Centre for Device Thermography and Reliability (CDTR), Fellow or IEEE, IET, MRS, SPIE and IoP. He obtained his PhD from the Max-Planck Institute for Solid State Physics in Stuttgart, Germany and joined the University of Bristol after being Feodor Lynen Postdoctoral Fellow at Brown University, USA