In 2018, a “buffer-free” GaN-on-SiC heteroepitaxy was brought to light for the first time by European semiconductor manufacturer SweGaN AB, using a novel ordered-vacancy assisted epitaxy to remove the conventional C/Fe-doped buffer. This new benchmark epitaxial structure enables several key enhancements in device performance including linearity, breakdown strength, and thermal property. As RF and power components continue to demand higher frequency and higher power capabilities to improve device efficiency, SweGaN supports the belief that the buffer-free concept of GaN-on-SiC HEMT heterostructures will prevail over GaN HEMTs with conventional C/Fe-doped buffers. In this presentation, the commercialization progress of such materials for a variety of applications will be provided.
Passionate for material growth within group III nitride compound semiconductors, Dr. Jr-Tai Chen is CEO/Co-founder of semiconductor manufacturer SweGaN in Linköping, Sweden. Under his technology and commercial leadership, the European manufacturer of custom-made Gallium Nitride on Silicon Carbide epitaxial wafers, “Ted” led the development realizing the revolutionary buffer-free GaN-on-SiC material, QuanFINE®. He has co-authored over fifty research papers within 3rd-generation semiconductor materials and an active participant in prestigious EU development programs including the new ALL2GaN EU project, focused on easily integrated energy-saving gallium nitride chips. He holds Ph.D. specializing in “MOCVD growth of GaN-based high electron mobility transistor structures”.