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Pierre Gassot received a M.Sc. and a Ph.D. in solid state physics from the University Joseph Fourier in Grenoble, France respectively in 1992 and 1997. From 1998 till 2000, he worked at Alcatel Microelectronics in Belgium as project leader on non-volatile memories embedded in smart power technologies. In 2001, he coordinated integration activities on advanced CMOS and BiCMOS for Alcatel Microelectronics in collaboration with foundries in Taiwan. From 2002 till 2007, he worked at AMIS Belgium as team leader for the development of non-volatile memories as well as on the enhancement of smart power technologies towards integrated power switching applications. In 2008, he received a Master of Business and Administration from the Vlerick Business School in Belgium. Later on that year, he joined ON Semiconductor Belgium as project leader to drive advanced BCD R&D activities and became in 2011 manager of the integration and characterization team in charge of the development of Low, Medium and High Voltage Silicon MOSFET’s as well as of D-Mode and E-Mode GaN HEMT technologies. From 2018 to early 2022, he headed the Corporate R&D department of ON Semiconductor Belgium in charge of GaN technology development and of supporting activities on SiC MOSFET’s. Since then, he has been heading the business development team for Specialty and GaN Power at imec Leuven.