GaN-on-Silicon is a key technology to sustain future power converter systems roadmaps in the field of IT electronics, renewable solar and emission free automotive applications. Exagan implemented proprietary 200-mm GaN-on-Silicon technology to accelerate GaN market adoption. G-FET™ & G-Drive™ product portfolio, provide extensive power range capabilities, as well as power switching solutions that combine the super-fast GaN-on-Silicon switch with its appropriate driver IC controlled by embedded diagnostics, protections and, much more functionalities. Those “easy to use” GaN solutions will help power innovators extending power conversion roadmaps, by creating smaller, more efficient and higher-performing power converters.
Frédéric Dupont received engineering degree from INSA Lyon in France in Materials engineering in 1996. After several years at CEA-LETI in strategic marketing, he joined SOITEC in 2000 where he held multiple position as program manager in LED, RF and Power innovation programs, before taking the responsibility of the Specialty Electronics Business Unit (GaAs and GaN epitaxy). In 2014 he co-founded Exagan, spin off from SOITEC and CEA-LETI; that he leads today as the CEO to position Exagan as an emerging leader in GaN-based electronics.