PRESENTATION
A Solution to Doping AlN Enabling a New Era of Nitride Semiconductors
AlN is an emerging semiconductor offering dramatic and short-term exploitation in power switching, high temperature electronics, RF electronics and optoelectronics facilitated by breakthroughs in new doping technologies enabled by low temperature, non-equilibrium epitaxy. Contrary to common understanding, low-temperature, metal-rich vacuum processes are shown to have higher surface diffusion lengths than high temperature nitrogen-rich methods. AlN’s band structure facilitates dramatically higher performance than possible with GaN especially for p-type devices. ~1000-30,000,000 times improvements in the AlN n and p-type resistivities (
Alan Doolittle
Georgia Institute of Technology
Dr. Alan Doolittle is the Joseph M. Pettit Professor in the School of Electrical and Computer Engineering at Georgia Institute of Technology. His principal interest is in the development of nitride-based and crystalline oxide-based devices as well as applying new growth techniques to facilitate material and device improvements. He has authored over 187 research papers, holds 15 patents and founded Innovative Advanced Materials Inc. to commercialize advanced deposition tools, and control algorithms for physical vapor deposition. Dr. Doolittle focuses on III-Nitride and oxide epitaxy for electronic, optoelectronic, and neuromorphic computational devices and is a pioneer of hyper-doping in nitride semiconductors.