PRESENTATION
Accelerating GaN Process Development through Modeling: from Recipe to Device Characteristics
Computer modeling has become a reliable workhorse in the semiconductor industry, capturing complex physical and chemical phenomena and providing valuable knowledge. As the demand for GaN-on-Si power devices increases, the industry requires solutions that can translate reactor recipes directly into material performance. In this work, we demonstrate the newest capabilities of STR’s modeling software for the analysis and optimization of GaN MOCVD processes.
These capabilities establish a direct correlation between growth regimes and epilayer properties, including thickness, composition, dopant/impurity concentration, and point defects. Furthermore, a new approach enables the convenient optimization of growth recipes to achieve an optimal combination of structural and electrical characteristics. This simultaneous improvement of wafer-level uniformity and electrical performance significantly reduces R&D cycles, supporting the transition toward high-yield, large-scale GaN manufacturing.
Andrey Smirnov
STR
Andrey Smirnov began his work in the semiconductor field when he joined STR as a student. He contributed to the development of models that later became part of the CGSim software used by leading manufacturers of electronic and solar grade silicon crystals and wafers. Since 2009, he has focused on coordination of cooperation projects with industrial partners, client interaction, and business development. Currently, he serves as Director of Business Development at STR Europe, where he works on strategic partnerships, key collaboration projects, and identifying directions for the development of new modeling capabilities in STR software for the semiconductor industry.