PRESENTATION
GaN Comes of Age: From Fast Chargers to Strategic Power Platforms
After establishing a strong foothold in consumer and mobile power, most notably fast chargers, GaN is now progressing into applications where scale, reliability, and system efficiency are critical. The global GaN power market is expected to approach $3 billion by 2030, reflecting this shift from volume-driven adoption to platform-level integration. The next phase of growth is being shaped by datacenters and electrified transportation. In AI datacenters, NVIDIA’s engagement with wide band-gap device suppliers highlights GaN’s role in enabling higher-efficiency power delivery, particularly in 800 VDC architectures designed to reduce losses and improve rack-level power density. At the same time, the automotive sector is adopting GaN for both onboard and off-board charging, driven by efficiency, bidirectionality, and compactness requirements. These market dynamics are reshaping the GaN ecosystem itself. As adoption moves toward high-volume, the industry is seeing deeper vertical integration, and the arrival of established power semiconductor players such as onsemi. Their entry reflects a shift in OEM expectations: from discrete performance advantages to long-term efficiency. Together, these trends mark GaN’s evolution from a specialist technology into a strategic pillar of the power semiconductor industry, supported by a broader, more mature, and increasingly diversified supplier base.
Roy Dagher
Yole Group
Part of the Compound Semiconductor team at Yole, Roy focuses on the GaN power market, analyzing and forecasting its evolution and it's integration in the power market. Prior to joining Yole, Roy spent five years working on the growth and characterization of GaN-based LEDs, specializing in native color emission for advanced optoelectronic applications, particularly in AR/VR and display technologies. Roy earned his PhD in 2017 from Université Côte d’Azur, where he conducted his research at CRHEA as part of the electronics team, focusing on the growth of graphene for electronic applications. Following his PhD, he joined CEA-Leti, integrating into the GaN team and gaining hands-on experience in cleanroom processing of GaN devices for transistors and display technologies. He is the author and co-author of 12 peer-reviewed publications in materials science and holds 4 patents in the GaN field. Roy also holds a Master’s degree in Nanosciences from the Lebanese University, obtained in 2014.