This talk introduces the latest progress of Sony’s GaN-based visible VCSELs with features such as plane and curved mirrors made of dielectric materials. This novel class of GaN-based VCSELs allow small apertures down to 3 μm and long cavities of more than 20 μm without the occurrence of diffraction loss. These structures have enabled low threshold currents, high efficiency operation, and robust fabrication processes with high lasing yield. The proposed structure is facilitating the production of VCSELs formed on semi-polar plane GaN substrates and arrayed VCSELs, allowing green VCSELs and watt-class blue VCSEL arrays.
Tatsushi Hamaguchi (Senior Scientist) was born in Osaka, Japan in 1980. He received the B.S. and M.S. degrees in material science and engineering from Kyoto University in 2004 and 2006. He received the Ph.D. degree in electronic engineering from Sophia University in 2019. From 2006 to 2008, he worked at the Nitride Semiconductor Research Laboratory of Nichia Corporation. After 2008, he worked for Sony corporation, where he did development of nitride-based edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs). He has acted as the leader of the Sony’s project team for nitride-based VCSELs during the recent years and awarded “Sony Outstanding Engineer Award 2018“.