We present recent progress on two complementary technologies in SiC Medium-Voltage (MV) power devices. These technologies include charge-balanced (CB) and deep-implanted vertical-pillar superjunction (SJ) structures, which serve as two scalable alternatives to conventional superjunction technologies, including multi-epitaxial growth and trench-refill. We review the fabrication steps for >3kV SiC CB and SJ diodes and MOSFETs, which are formed using high-energy (MeV) implantations. These switches can enable the next generation of MV power converters and can replace MV unipolar SiC switches with limited performance at higher frequencies.
Reza Ghandi received a B.Sc. degree in electrical engineering from the University of Tehran, and M.Sc. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2007 and 2011, respectively. His doctoral work focused on fabrication technologies for efficient high-power Silicon Carbide bipolar transistors. In 2011, he joined GE Research in Niskayuna, NY, and is currently working on the development of high-voltage SiC switches and integrated circuits for high-power and high-temperature applications. He has more than 50 publications in peered reviewed journals and has been in leadership and technical support roles for several internal and external projects in high power and high temperature electronics, switches and sensors.