PRESENTATION
Expanding the Spectral Range of GaN-based SLEDs
EXALOS recently demonstrated SLEDs exhibiting increased optical confinement factors (modal gains) at 512 nm by implementing an InAlN-based n-type cladding in the epitaxial structure. By leveraging the latter approach and by growth conditions optimization, here we demonstrate SLEDs devices at 525 nm and discuss their performance. A direct comparison with LDs realized from the same epitaxial wafer, exhibiting 10 nm longer emission wavelength, will be presented. This result, together with varied experimental data will allow us to elucidate the challenges faced when extending the SLED wavelength in the true green spectral range and beyond.
Marco Malinverni
Exalos
Dr. Marco Malinverni received his MSci degree in Physics from Imperial College London and Ph.D in Physics from Ecole Polytechnique Fédrale de Lausanne (EPFL). In 2016 he joined EXALOS AG for the development of III-Nitride LDs and SLEDs. He has 15 years of experience in the growth and design of near UV to green (390 – 535 nm) edge-emitting optoelectronic devices. His scientific achievements, other than the development of commercial-grade edge-emitters, span from the demonstration of HEMTs on single-crystal diamond, to the realization GaN tunnel homojunctions, and the implementation of regrown ohmic contacts for AlInN/GaN HEMTs on silicon working in the W-band (94 GHz). Recently, Dr. Marco Malinverni demonstrated blue and green LDs and SLEDs with InAlN/GaN n-type claddings exhibiting lower threshold currents and decreased power consumption with respect to conventional AlGaN-based devices.