PRESENTATION

Improving GaN with a Dash of Oxygen

Atomera is commercializing a proprietary epitaxial technology, known as MST® (Mears Silicon Technology™), across a broad technology space, from power and analog electronics, through RF devices to the most advanced gate-all-around (GAA) logic applications. Experiments conducted with Texas State University (Prof. E. Piner) and Sandia National Laboratories, where a thin layer of MST is deposited on Si (111) substrates prior to process-of-record GaN epitaxy, have demonstrated higher crystal quality of the GaN stack and improved electrical characteristics in fabricated GaN devices. Further development and commercialization efforts are underway.

Robert Mears

Atomera

Robert Mears is a recognized pioneer and leading expert in photonics and nano-scale material engineering with more than 30 years’ experience. In the mid-1980’s, Dr. Mears invented and was first to demonstrate the Erbium Doped Fiber Amplifier (EDFA), a transformative technology for broadband networks. In 2001 Dr. Mears founded Nanovis LLC (the original predecessor company to Atomera) to leverage his insights into the nano-scale engineering of new materials. Dr. Mears has authored or co-authored approximately 250 publications and patents and is an Emeritus Fellow of Pembroke College, Cambridge, England. Dr. Mears holds B.A and M.A. degrees in Physics from University of Oxford and a Ph.D. in Electronics and Computer Science from the University of Southampton.