High Voltage enhancement Mode GaN transistors have now reached maturity and we observe wide adoption of this technology in a variety of low power, consumer applications. However, the peculiarities of eMode GaN gate impose the use of complex driving circuits. This, combined with perceived unproven long term reliability vs established Si and SiC solutions, are still hindering similar adoption rate in high power converters. A new integrated GaN IC technology has emerged, by fully exploiting the lateral structure of GaN transistors, which demonstrates high performance and ease of use. Similarly, robustness and reliability are now aligned to the highest standards.
Andrea has spent more than 25 years in the semiconductor industry. He had various R&D roles at International Rectifier. He then focused on product marketing at Vishay Technology and later moved to Infineon where he started and managed the Power GaN programme. He spent the last 10+ years on GaN, leading key development and application teams and marketing activities, bringing the GaN challenge to Silicon to the next level. Eventually, he led the business development group for Infineon’s automotive division focused on envisioning the application of GaN solutions for EV/HEV and autonomous driving.At CGD he is the CCO, leading Marketing and Sales activities worldwide.