PRESENTATION

Revelios: Semi-Automated, Non-Destructive Crystalline Defect Metrology for GaN-Based Epitaxial Layers

Threading dislocations (TDs) are critical crystalline defects in GaN-based materials, significantly impacting the performance, reliability, and lifetime of electronic and optoelectronic devices. We present Revelios, a semi-automated, non-destructive crystalline defect metrology software prototype based on electron channeling contrast imaging (ECCI). Revelios SW prototype enables large-area acquisition, automated stitching, detection and classification of TDs into a-, c-, and a+c-types. Dislocation type is determined by combining data acquired at different diffraction conditions and analyzing the black-white contrast orientation with respect to the set diffraction vector. Validation against expert manual evaluation shows a detection accuracy of 94% and a classification accuracy of 79%. These results demonstrate that Revelios SW prototype provides a robust and scalable solution for high-throughput GaN defect metrology and could be suitable for epitaxial process optimization and manufacturing control. Automation significantly increases throughput and reliability, supports efficient quantitative TD analysis, and makes the methodology accessible to less experienced users.