The growing interest in Silicon Carbide (SiC) materials leads to a shift in manufacturing demands beyond conventional chemical-mechanical polishing (CMP) restrictions. Ion beam trimming (IBT), traditionally applied to adjust film thicknesses, is gaining significance in the context of total thickness variation reduction (TTVR). The process allows precise surface modification and enhances the material's overall quality by reducing the surface roughness. This ensures a smoother surface finish, which is crucial for efficient high-end applications, e.g., higher breakthrough voltages for power devices. In addition, sub-surface damage reduction in SiC manufacturing can offer distinct advantages. For example, it minimizes the risk of surface defects commonly associated with mechanical etching processes. As a plasma process, ion beam trimming also avoids mechanical stress for the substrate, which is particularly advantageous by contributing the preservation of material integrity and enhancing the overall reliability of SiC components. This presentation addresses an evolution in SiC manufacturing
After completing his physics degree at Chemnitz University of Technology in 2012, Philipp Böttger became a research assistant at Fraunhofer ENAS. His main field of work was the development of AC-powered LEDs based on quantum dots. In 2015, he moved to the research and development department at scia System, focusing on process development for ion beam trimming systems. He then changed to the technical sales department in the same company. Currently, he is mainly responsible for sales projects in Germany, Benelux, and North America.