PRESENTATION
Analysis of Gallium Nitride Epilayers by Multi-ion Species Plasma-FIB and S/TEM Techniques
Analysis of a GaN device with state-of-the-art preparation using noble ions to minimize damage, enabling accurate epi-layer characterization in (S)TEM. A lamella containing the AlGaN/GaN stack was prepared with both xenon and argon plasma ions while subsequent analysis in (S)TEM enabled atomic-scale chemical mapping, lattice-resolved interface imaging, and strain and grain orientation analysis.
Martin Äalkovsky
Thermofisher
Dr. Martin Calkovsky is an electron microscopy expert specializing in crystalline defect metrology. With over 9 years of experience, Dr. Calkovsky currently holds the position of Application Scientist at Thermo Fisher Scientific Brno, focusing on developing advanced metrology methods using scanning electron microscopy (SEM) techniques. Holding a Ph.D. from Karlsruhe Institute of Technology, he has a proven track record in methodology development for material contrast quantification. Dr. Calkovsky has also held positions at the Institute for Basic Science South Korea and Karlsruhe Institute of Technology and is proficient in FIB/SEM and TEM microscopy for materials analysis