GaN and SiC Power devices are now commercially available, the next generation will be more complex structures and for wide scale adoption both technical challenges must be overcome and costs reduced. By focussed development and leveraging over 37 years of CS technology knowledge Oxford Instruments Plasma Technology has produced advanced remote Plasma Enhanced Atomic Layer Deposition (PE ALD) and Plasma Etch solutions that give superior device performance and cost down per wafer. Remote PE ALD is used to create dense high k films for gate dielectrics and passivation. While Atomic Layer Etching (ALE) introduces a new paradigm in etch depth accuracy, essential for recessed GaN HEMTs. Working closely with our customers we ensure they have the tools to get the most out of their devices.
Frazer Anderson has worked for Oxford Instruments Plasma Technology (OIPT) for 21 years and is currently the Innovation and Solutions Director, having responsibility for Product Development, Collaborative projects and embedding a culture of Innovation throughout the business. During his 36-year career in the design and manufacture of capital equipment for the semiconductor industry Frazer has held senior roles in Operations, Engineering and Product Management. He has led a number of acquisition projects, led a cross business team to set up the OI Plc manufacturing facility in Shanghai, and has been instrumental in defining and implementing OIPT’s global collaboration strategy