Compound semiconductors, like SiC and GaN, are increasingly attractive for their ability to operate at higher voltages, currents, and frequencies, especially in power and RF devices. However, fabricating wafers using these compounds has proven to be challenging, which can adversely impact manufacturing yield and costs. In addition to conventional semiconductor defects, one of the challenges is the presence of crystalline dislocations that are often difficult to identify and characterize. This presentation will use real world use cases to discuss; defects including crystalline dislocations, cross-section and TEM lamella focused ion beam sample preparation, and the performance advantages provided by ion sources other than Ga+.
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