PRESENTATION

Scaling GaN Power Device Production – Enabling Yield, Cost and Throughput Optimisation for Mass Adoption

As GaN power devices move into high-volume markets, manufacturers must balance cost, yield and performance. This presentation explores how advanced MOCVD process control, uniformity optimisation and production-focused reactor design enable scalable GaN manufacturing. Real-world data will demonstrate how process innovation supports higher device yields, reduced cost per wafer and reliable performance for next-generation power applications.