PRESENTATION

Prospects of (ultra) Wide Bandgap Oxide ICs

(Ultra)wide bandgap metal oxide semiconductors including Ga2O3 and In2O3 have attracted enormous interests. They could offer markedly larger figures of merits for power and RF applications than other known semiconductors, as well as excellent scalability and low thermal budget. Thus they are promising for More Moore, More than Moore, and Beyond Moore applications. This talk will cover the potential of those large bandgap oxides for IC research.

Xiaohang Li

KAUST

Xiaohang Li is an Associate Professor of Electrical and Computer Engineering and Applied Physics, and the founding taskforce chair of Technology Innovation and Entrepreneurship Program at KAUST. He obtained Ph.D. in Electrical Engineering from Georgia Institute of Technology where he received the Institute’s highest PhD student honor. His research focuses on cutting-edge research on (ultra)wide bandgap semiconductors for next-generation electronics and photonics. He has authored over 170 journal papers, and holds >20 issued patents. He is the recipient of several prestigious awards including the Harold M. Manasevit Young Investigator Award from the American Association for Crystal Growth, the SPIE D. J. Lovell Scholarship, the IEEE Photonics Graduate Student Fellowship, the Georgia Tech 40 under 40 Award. His team has received best student and paper awards from IWN, ICNS, and SPIE. He is an Associate Editor of Photonics Research, an editorial member of Journal of Semiconductor, a guest editor of Advanced Electronic Materials and Advanced Materials Interfaces, and as a committee member of several leading conferences including IWN and ICNS.