Paul is the director of Product Management for the Bruker Semiconductor Division. He has been working in X-ray characterisation of materials since his PhD in the 1990s, with many published papers and patents. He was a pioneer of X-ray diffraction within the Si industry, launching products for in-fab high resolution diffraction and reflectivity, and then launching the award-winning QC3 system for in-line GaN LED monitoring in 2010. More recently he is responsible for the product development and roadmap for all Bruker X-ray systems within the semiconductor division, covering Si and compound semi industries with a wide-ranging product portfolio.
He has a PhD in condensed matter physics and BSc (Hons) in Physics from Leeds University.
A major issue faced by the SiC industry is linked to the question of how to ramp up the production and meet the ever-growing demand of materials for the power electronics sector. In order to achieve this, the SiC wafer supply needs to develop a means to drive the cost of production down. One method of doing this is by improving yield. Silicon Carbide wafer growth and device manufacturing have improved significantly but the process yields are still too low due to the high densities of crystalline defects, particularly as substrate sizes increase, which are damaging the device performance and their long-term reliability. It is therefore critical to develop new metrology techniques that are capable of detecting these defects allowing to understand how they form and giving a means to reduce or eliminate them. We introduce high speed X-ray diffraction Imaging (XRDI, sometimes known as X-ray topography) as one of these techniques. It enables the non-destructive detection of the detrimental TSDs, TEDs, SFs and BPDs on all types of SiC wafers, including n+ doped substrates, without some of the limitations of existing etch and optical inspection methods. It is a viable candidate to replace destructive KOH etching in the long term as a defect metrology and reduce the cost of SiC wafers manufacturing. In this talk we will discuss the latest developments in XRDI which enable fully automated high throughput measurements at high resolution for integration into modern wafer production lines to enable direct feedback into the process development.