Tamzin is Senior Applications Scientist in the X-ray group at Bruker UK. She has spent her career in X-ray characterisation of materials since completing her PhD in the mid 1990s. She has worked with a wide range of customers worldwide, in both academia and industry, looking to match characterisation and metrology solutions to customer issues and demonstrate those capabilities adapted to customer needs.
Tamzin holds a PhD in solid state physics and a BSc (Hons) in Applied Physics from the University of Bath, UK.
A major issue faced by the SiC industry is linked to the question of how to ramp up the production and meet the ever-growing demand of materials for the power electronics sector. In order to achieve this, the SiC wafer supply needs to develop a means to drive the cost of production down. One method of doing this is by improving yield. Silicon Carbide wafer growth and device manufacturing have improved significantly but the process yields are still too low due to the high densities of crystalline defects, particularly as substrate sizes increase, which are damaging the device performance and their long-term reliability. It is therefore critical to develop new metrology techniques that are capable of detecting these defects allowing to understand how they form and giving a means to reduce or eliminate them. We introduce high speed X-Ray Diffraction Imaging (XRDI, sometimes known as X-Ray Topography) as one of these techniques. It enables the non-destructive detection of the detrimental TSDs, TEDs, SFs and BPDs on all types of SiC wafers, including n+ doped substrates, without some of the limitations of existing etch and optical inspection methods. It is a viable candidate to replace destructive KOH etching in the long term as a defect metrology and reduce the cost of SiC wafers manufacturing. In this talk we will discuss the latest developments in XRDI which enable fully automated high throughput measurements at high resolution for integration into modern wafer production lines to enable direct feedback into the process development.