Frank Hofmann is an Applications Engineer in the Semiconductor Division at Rigaku Europe SE. He has more than 25 years of global experience in the field of x-ray metrology. His passion for materials characterization, using x-ray techniques, started during his PhD work at the University at Albany.
As SiC manufacturing scales to 200 mm wafers, yield is increasingly limited by surface contamination, crystalline quality, and thin-film uniformity. This talk presents an integrated approach using inline and offline TXRF, HRXRD, and XRR to quantify metal contamination, strain, defects, and film properties, enabling predictive process control and prevention of yield excursions across SiC fabs.