Dong Sik Suh is Vice President and Head of the OED Business at TES, where he oversees MOCVD and PECVD equipment for RF GaN, SiC power devices, deep UV LEDs, and advanced display applications. He holds an MS in Materials Science and Engineering from the University of Texas at Arlington and a BS in Metallurgical Engineering from Sungkyunkwan University. With nearly three decades of experience in the compound semiconductor industry, he has held leadership roles spanning R&D, marketing, and business development at Samsung, LG Innotek, and TES.
As RF GaN HEMTs advance toward higher frequency and power density, both material quality and reliability are becoming critical. This presentation introduces TES’s Tunable Epi System and discusses how fast gas switching and flow control enable high-quality AlN buffers, abrupt interfaces, and uniform GaN/AlGaN epitaxy to support scalable RF GaN production.