Gallium Oxide RF Electronics: Recent Advances Toward Unlocking UWBG Potential

Beta-phase gallium oxide (β-Ga₂O₃) has emerged as a competitive ultra-wide bandgap (UWBG) semiconductor for next-generation RF electronics, leveraging its exceptional material properties—including an ultra-large bandgap (4.7–4.9 eV), high theoretical breakdown field (8 MV/cm), and electron saturation velocity (2×107 cm/s). Crucially, its unique capability for low-cost melt-growth of bulk substrates enables high-quality, large-scale wafer production, overcoming economic barriers faced by other UWBG materials. It is generally accepted that the low electron mobility and extremely low thermal conductivity are major obstacles towards realizing high performance β-Ga₂O₃-based RF power FETs. This presentation highlights our group’s recent breakthroughs in advancing β-Ga₂O₃-based RF power devices and technologies. Here we report heterogenous integration of single-crystal gallium oxide thin film onto high thermal conductivity substrate and explore the great promise of β-Ga₂O₃ for future high-voltage, high-power and low-noise RF electronics.