Accomplished analytical chemist and application scientist with 15+ years of experience in X-ray metrology in the semiconductor industry. Highly skilled in trace metal laboratory analysis. Strong project management, customer support, and problem-solving skills. Cultivates and maintains trusted business relationships. Ability to write and adapt technical presentations to various levels of audiences. Author of numerous published articles and presentations.
As SiC manufacturing scales to 200 mm wafers, yield is increasingly limited by surface contamination, crystalline quality, and thin-film uniformity. This talk presents an integrated approach using inline and offline TXRF, HRXRD, and XRR to quantify metal contamination, strain, defects, and film properties, enabling predictive process control and prevention of yield excursions across SiC fabs.