With years of experience in microelectronics and nanotechnology engineering, specializing in e-beam lithography, Amanda now focuses on Process Control solutions at Raith. She brings extensive expertise in developing and optimizing lithographic processes, ensuring precision at the nanoscale, and managing complex engineering projects.
The development of compound semiconductor (CS) components, such as GaN-based power devices, requires precise and flexible metrology for process control. In this study, we demonstrate how the Raith VECTOR, an advanced SEM-based metrology platform, enables high-throughput wafer-scale CD measurements and process monitoring for GaN HEMT structures. Using automated workflows, we achieved precise placement accuracy, machine learning-driven defect detection, and repeatability within and across wafers. Additionally, a Design of Experiments (DOE) was conducted to optimize E-beam lithography (EBL) parameters. VECTOR’s automation and stability make it a versatile solution for both research and production in CS fabrication.