Tetsuya Takeuchi
Professor in Dept. of Materials Science and Engineering, Meijo University
Meijo University
Tetsuya Takeuchi received Ph. D from Meijo University in 1999. After working for Hewlett-Packard Labs Japan, Agilent Technologies Labs, Lumileds, and Canon, he joined again Meijo university as an associate professor in 2010, and became a professor in 2015. He has been involved in epitaxial growths of III-V compound semiconductors and designs/fabrications of LEDs, tunnel junctions, and VCSELs.
Presentations
Perfecting GaN VCSEL Production Process
We demonstrated over 20% wall-plug efficiency (WPE) of GaN VCSELs emitting at 420 nm wavelength. Such a high performance is achieved by the following three key technologies we have developed, 1) high-quality semiconductor-based (AlInN/GaN) distributed Bragg reflectors (DBR), 2) simple nano-height mesa for lateral optical/current confinements, and 3) in situ cavity length control with in situ reflectivity spectra measurement. Towards even higher WPE, we plan to include our additional technologies into the VCSELs, 4) low resistive tunnel junctions for p-contact and 5) highly conductive AlInN/GaN DBR for n-contact. In this talk, we show these technologies and update our VCSEL performances.