The promise of cubic Boron Nitride (c-BN)

Cubic boron nitride (c-BN), an ultra-wide band gap semiconductor with a band gap of approximately 6.4 eV, has emerged as a promising material for next-generation electronic and optoelectronic devices. Its exceptional thermal conductivity, chemical stability, and high breakdown electric field make it ideal for power electronics, extreme-environment applications, and possibly deep ultraviolet optoelectronics. Unlike diamond, c-BN has demonstrated multiple, relatively shallow impurity levels yielding n- and p-type doping, potentially enabling versatile device design. This talk will explore recent advances in c-BN synthesis, including high-quality crystal growth techniques. By addressing challenges such as scalable production and material uniformity, we highlight the transformative potential of c-BN in enabling next-generation semiconductor technologies.