Marco Malinverni

Senior Research Scientist, Head of GaN Epitaxy

Exalos

Dr. Marco Malinverni received his MSci degree in Physics from Imperial College London and Ph.D in Physics from Ecole Polytechnique Fédrale de Lausanne (EPFL). In 2016 he joined EXALOS AG for the development of III-Nitride LDs and SLEDs. He has 15 years of experience in the growth and design of near UV to green (390 – 535 nm) edge-emitting optoelectronic devices. His scientific achievements, other than the development of commercial-grade edge-emitters, span from the demonstration of HEMTs on single-crystal diamond, to the realization GaN tunnel homojunctions, and the implementation of regrown ohmic contacts for AlInN/GaN HEMTs on silicon working in the W-band (94 GHz). Recently, Dr. Marco Malinverni demonstrated blue and green LDs and SLEDs with InAlN/GaN n-type claddings exhibiting lower threshold currents and decreased power consumption with respect to conventional AlGaN-based devices.