Sven EINFELDT studied physics at the Universities of Rostock and Jena and received his PhD from the University of Würzburg in 1995. He was a postdoc at the University of Bremen and North Carolina State University in the USA and received his teaching qualification (Habi-litation) in 2002. Since 2004 he has been working at the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) in Berlin. As head of the Joint Lab GaN Opto-electronics at FBH he works on the development of laser diodes and ultraviolet emitting light emitting diodes based on group III nitrides.
The state of development of LEDs with a very short emission wavelength below 240 nm, so-called far-UVC LEDs, is presented. The main focus is on progress in increasing the maximum emission power, the efficiency and the reliability of the devices and understanding the physics behind current limitations in performance. Technological aspects along the entire fabrication chain, i.e. from epitaxy, chip process technology and chip packaging will be discussed. Finally, turn-key ready irradiation systems based on these LEDs and results from their use in the fields of gas sensing and antisepsis on humans will be shown.