Sven EINFELDT studied physics at the Universities of Rostock and Jena and received his PhD from the University of Würzburg in 1995. He was a postdoc at the University of Bremen and North Carolina State University in the USA and received his teaching qualification (Habi-litation) in 2002. Since 2004 he has been working at the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) in Berlin. As head of the Joint Lab GaN Opto-electronics at FBH he works on the development of laser diodes and ultraviolet emitting light emitting diodes based on group III nitrides.