Reza Ghandi received a B.Sc. degree in electrical engineering from the University of Tehran, and M.Sc. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2007 and 2011, respectively. His doctoral work focused on fabrication technologies for efficient high-power Silicon Carbide bipolar transistors. In 2011, he joined GE Research in Niskayuna, NY, and is currently working on the development of high-voltage SiC switches and integrated circuits for high-power and high-temperature applications. He has more than 50 publications in peered reviewed journals and has been in leadership and technical support roles for several internal and external projects in high power and high temperature electronics, switches and sensors.
Awaiting presentation abstract.