Ahmed Nejim obtained his PhD in 1990 in Ion-Solid interaction. A wide experience in semiconductor processing and device design was obtained in 17 years of research in material science, semiconductor physics in academia. Experience in lecturing, mentoring and facility management. More than 30 years of technical project management, European multinational projects, Liaison research fellow of a UK national research facility in contact with national industry and national and international academia. Since 2001 he has been working at Silvaco supporting TCAD software users and developing collaborative projects. He manages R&D Projects for Silvaco Europe.
GaN technology designers face many challenges. These include material quality, geometry options and rising performance expectations. Physics and material science based numerical simulations reveal the available choices and point to an optimal compromise among conflicting demands. Aspects of bandgap alignment, carrier scattering as well as crystallographic defects play a key role in power and RF performance of the technology. These are readily revealed using numerical modelling of the manufacturing process as well as steady state and transient simulation of carrier transport.