Leading-Edge MOCVD Technology Enabling Next-Generation Photonics Applications

Photonics technology is projected to have double-digit growth over the next five years as existing applications increase and new applications are realized. Photonics devices such as VCSELs, edge emitting lasers, miniLEDs and microLEDs are seeing high demand in a wide variety of new applications including world-facing 3D sensing, high-speed data communication, LIDAR, smartwatches, AR/VR and ultra-high definition displays. Critical in the manufacturing of these devices is MOCVD epitaxial growth technology. This technology must meet industry’s stringent performance requirements, including extremely uniform materials wavelength, thickness and composition, dopant control and low defectivity while reducing costs via high productivity, high yields and lower operating expenses. Veeco has developed our next-generation Lumina™ As/P MOCVD platform for emerging applications that meet and exceed industry’s roadmap for VCSELS, edge emitting lasers and mini/microLEDs. Using VCSEL as an example, we are capable of achieving total population uniformity, i.e., within-wafer, wafer-to-wafer, and run-to-run of >95% yield in +/- 3nm bin on 6” GaAs with defectivity <0.5 defects / cm2 @ >2um and 50% higher throughput compared to other platforms. Veeco has also developed an improved GaN MOCVD platform for mini/µLEDs utilizing industry’s leading high-volume manufacturing EPIK® platform. For the miniLED market, we are exceeding industry’s uniformity requirements with within wafer wavelength uniformity of <0.6nm @ 1σ for blue and ~1nm @ 1σ for green on 6” sapphire in our high capacity, high throughput cluster platform. For microLED applications on 8” and 12” silicon, Veeco has developed single wafer technology for best in-class uniformity. Details of the technology and data will be discussed as part of this presentation.