Dr. Vladimir Odnoblyudov has spent more than 15 years in optoelectronic and electronic devices, process integration and wide bandgap semiconductor technologies with executive leadership and technical management positions, from early stage start-ups to Fortune 500 companies. Dr. Odnoblyudov served as Director of R&D and Emerging Technologies of Bridgelux, Inc., focusing on next generation solid state lighting (SSL) technologies, from LED chip level through smart sub-system level. Before that, he served as Director of LED Solutions at Micron Technology, Inc., (NASDAQ: MU), leading R&D efforts for evolutionary large diameter GaN wafer and device technology in 200mm CMOS pilot line fab, and with $50 Million annual budget. Development and pilot line activities spanned from substrate level through backend including chip-scale packaging and applications development. Within Micron’s R&D organization, Dr. Odnoblyudov served as a member of the IP Review and Development Committee. From 2006 to 2009, he was the Founder and CTO of Quanlight, Inc., an LED start-up focusing on development of novel yellow-red chip technology which drew several rounds of corporate and venture financing.While obtaining MS/BS degrees from SPbTU, Dr. Odnoblyudov worked as Research Assistant in the Laboratory of Semiconductor Heterostructures, lead by Prof. Zhores Alferov, Nobel Prize Winner in Physics in 2000 (Ioffe Physico-Technical Institute).
In recent years, GaN has become a forefront wide bandgap semiconductor material for nextgeneration, energy-efficient power electronics. With its higher breakdown strength, faster switching speed and lower on-resistance, GaN power devices can convert power far more efficiently than Si-based devices. While its performance is commercially demonstrated, widespread GaN adoption requires a scalable and high-yielding manufacturable technology platform enabling economies of scale and a full spectrum of low-cost products such as lateral and vertical power switches extending from 100V to 1,200V and beyond, monolithic ICs and rectifiers. QROMIS’ disruptive commercial solution to high volume, low cost and scalable GaN device manufacturing has been steadily gaining traction, owing to unique properties of speciallydesigned CMOS fab-friendly and semi-spec substrate called “QST®” (QROMIS Substrate Technology) with a core having a thermal expansion that very closely matches the thermal expansion of the GaN/AlGaN epitaxial layers. QST® enables breakage-free high-volume manufacturing of standard semi-spec thickness 200mm GaN device wafers (scalable to 300mm), covering all GaN applications including 100V-to-1800V high performance power devices, RF devices, and display microLEDs. In this talk, the following status updates on 200mm QST®-based materials and device technologies will be presented: (1) commercial QST® substrate products, (2) commercial GaNon-QST® epi-wafer products, including development studies on epi-wafers for 1,200V and beyond applications, (3) high-performance normally-off 650V p-GaN based GaN-on-QST® HEMT transistors & monolithic ICs (with integrated drivers and logic) fabricated in a CMOS fab and commercialization timelines, (4) 200mm GaN-on-QST® device foundry services for the industry players, and (5) initial high-performance GaN-on-QST® RF device results.