Sebastian Krause

Research Associate GaN Technology and Devices

Fraunhofer IAF

Sebastian Krause joined Fraunhofer Institute for Applied Solid State Physics IAF in 2015. He is involved in the GaN technology development and device design for frequencies up to > 200 GHz. In particular, he is responsible for the conception and development of IAF’s 100-V GaN technology.

Sebastian received his M.Sc. degree in “Micro and Nanoelectronics” from Karlsruhe Institute of Technology in 2015.